The ON Semiconductor FDD6796A FDD6696 is a high-performance, N-Channel PowerTrench® MOSFET that delivers efficiency and power density critical for today's demanding electronic applications. This device is designed to handle significant power levels with ease, making it an ideal choice for power management tasks in a wide range of products.
Key Features
- Low RDS(on): Provides lower conduction losses and enhances power efficiency.
- High Current Capability: Suitable for high current applications, ensuring reliability under heavy load conditions.
- Fast Switching Speed: Enables high-frequency operation, reducing the size of passive components and improving overall efficiency.
- PowerTrench® Technology: Minimizes on-state resistance while maintaining superior switching performance, optimizing the device for synchronous rectification.
Applications
The FDD6796A FDD6696 is versatile and can be used in various applications, including:
- DC/DC converters
- Power supplies for servers, desktops, and notebooks
- Battery management systems
- Motor drives
- Load switch applications
Product Specifications
| Parameter |
Value |
| Drain-Source Voltage (VDS) |
30V |
| Continuous Drain Current (ID) |
13.5A |
| Power Dissipation (PD) |
2.5W |
| RDS(on) |
8.5 mΩ |
For engineers and designers looking for a MOSFET that provides a combination of low gate charge, ruggedized device design, and low RDS(on), the ON Semiconductor FDD6796A FDD6696 is a premium choice. Its robustness and reliability make it suitable for high-performance power management systems, contributing to the development of more efficient and compact electronic devices.