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FDMA86151L

Part No FDMA86151L
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 3.3A 6MICROFET  /  N-Channel 100 V 3.3A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series PowerTrench®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 88mOhm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 50 V
Power Dissipation (Max) 2.4W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 6-MicroFET (2x2)
Package / Case 6-WDFN Exposed Pad
Base Product Number FDMA86151
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names FDMA86151LTR,FDMA86151LCT,FDMA86151LDKR
Standard Package 3,000
Win Source Part Number 1017561-FDMA86151L
Ultra Librarian 3D Model Ultra Librarian FDMA86151L CAD Model

Description

ON Semiconductor FDMA86151L P-Channel PowerTrench® MOSFET

The FDMA86151L is a high-performance, P-channel PowerTrench® MOSFET designed by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is a part of their extensive portfolio of power management devices, tailored for power switching applications where high efficiency is paramount.

Key Features

  • Low On-Resistance: The device features an exceptionally low on-resistance (R<sub>DS(on)) of 8.4 mΩ at V<sub>GS = -10 V, which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Power Dissipation: With a power dissipation of 48 W, the FDMA86151L is capable of handling high currents, making it suitable for demanding power applications.
  • Advanced PowerTrench® Technology: This technology enables the MOSFET to have a very low gate charge (Q<sub>G), low gate-to-drain charge (Q<sub>GD), and a fast switching performance, which are critical for high-efficiency power supplies.
  • High Threshold Voltage: A threshold voltage (V<sub>th) of -2.0 V ensures that the MOSFET remains off until the gate-source voltage reaches the necessary level, preventing unintentional turn-ons.

Applications

The FDMA86151L is ideal for a wide range of power management tasks, especially in portable and battery-powered devices where energy efficiency is crucial. Its typical applications include:

  • Load switches
  • Power management in portable devices
  • DC/DC conversion
  • Battery protection circuits
  • Power amplifiers

Package and Reliability

Encased in a compact 6-pin MLP package, the FDMA86151L offers a space-saving solution without compromising on power and performance. The device also meets ON Semiconductor's stringent quality and reliability standards, ensuring long-term stability and performance in various operating conditions.

Environmental Compliance

ON Semiconductor is committed to environmental stewardship. The FDMA86151L is RoHS compliant, reflecting the company's dedication to reducing the environmental impact of its products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0269 $51.3450
120+ $0.8426 $101.1120
185+ $0.8162 $150.9970
255+ $0.7899 $201.4245
330+ $0.7636 $251.9880
440+ $0.6846 $301.2240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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