ON Semiconductor FDMS4D0N12C N-Channel PowerTrench® MOSFET

The FDMS4D0N12C is a state-of-the-art N-Channel PowerTrench<sup>® MOSFET from ON Semiconductor, designed for high-efficiency power management applications. This MOSFET utilizes advanced trench technology to provide superior performance in terms of low on-resistance and high switching speeds, making it an ideal choice for a wide range of power conversion systems.

Key Features:

• Low On-Resistance: The device features an extremely low on-resistance (R<sub>DS(on)) of just 4.0 mΩ at V<sub>GS = 10 V, which results in minimal conduction losses and enhances overall efficiency.
• High Current Capability: With a continuous drain current (I<sub>D) of 25 A, the FDMS4D0N12C can handle high current applications with ease, making it suitable for demanding environments.
• PowerTrench<sup>® Technology: ON Semiconductor's proprietary PowerTrench<sup>® technology enables the MOSFET to achieve low gate charge (Q<sub>g) and reduced switching losses, which is critical for high-frequency operation.
• Optimized Gate Charge: The MOSFET is designed to have an optimized gate charge, which helps in achieving high-speed switching performance, essential for modern power supply designs.
• 100% UIL Tested: The product is subjected to 100% UIL (Unclamped Inductive Switching) testing, ensuring reliability and robustness in applications where the MOSFET is expected to handle high inductive loads.

Applications:

The FDMS4D0N12C is versatile and can be used in a variety of applications, including:

• DC/DC converters
• Motor drives
• Power supply units
• Point of Load (POL) modules
• Computing and server power systems

Package and Environmental Compliance:

The FDMS4D0N12C is available in a compact 8-lead Power 56 package, which not only saves space but also provides excellent thermal performance. It is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability by avoiding the use of hazardous substances.