The FDN86501LZ from ON Semiconductor is a high-performance, N-Channel PowerTrench® MOSFET designed for a wide range of applications. This power-efficient device is an ideal choice for power management tasks in both consumer and industrial electronics due to its low on-resistance and high switching speed.

Key Features

• Advanced PowerTrench® Technology: This technology enables the MOSFET to achieve very low on-resistance and gate charge, resulting in a high performance-to-power ratio.
• Low R_DS(on): With an on-resistance as low as 8.5 mΩ at V_GS = 10 V, the FDN86501LZ provides efficient power conversion, which is critical for reducing energy consumption.
• High Continuous Drain Current: It offers a continuous drain current (I_D) of up to 11 A, making it capable of handling high current applications.
• High Switching Performance: Fast switching characteristics make it suitable for high-frequency circuits, improving efficiency and reducing switching losses.
• Thermal Management: The device is encapsulated in a SuperSOT™-6 package, which enhances thermal performance and reliability.

Applications

The FDN86501LZ MOSFET is versatile and can be used in a variety of applications, including:

• DC/DC Converters
• Power Supplies
• Motor Drives
• Battery Management Systems
• Load Switches
• Power Tool Controls
• LED Lighting

Product Specifications

With its robust design and efficient operation, the FDN86501LZ from ON Semiconductor is a solid choice for engineers looking to improve power density and efficiency in their designs.