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FGA40T65SHD

Part No FGA40T65SHD
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 650V 80A TO3PN
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 40A
Power - Max 268 W
Switching Energy 1.01mJ (on), 297µJ (off)
Input Type Standard
Gate Charge 72.2 nC
Td (on/off) @ 25°C 19.2ns/65.6ns
Test Condition 400V, 40A, 6Ohm, 15V
Reverse Recovery Time (trr) 31.8 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
Base Product Number FGA40T65
Standard Package 450 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 871749-FGA40T65SHD
Ultra Librarian 3D Model Ultra Librarian FGA40T65SHD CAD Model

Description

Introducing the FGA40T65SHD from ON Semiconductor

The FGA40T65SHD is a state-of-the-art Field Stop Trench IGBT (Insulated Gate Bipolar Transistor) designed and manufactured by the renowned ON Semiconductor. This high-performance IGBT is tailored for applications that demand efficiency, reliability, and high-speed switching. It is an ideal choice for a wide range of power electronics applications including inverters, converters, and motor drives.

Key Features of the FGA40T65SHD

  • High Current Capability: With a continuous collector current (I<sub>C) rating of 40A, the FGA40T65SHD can handle significant power levels, making it suitable for high-power applications.
  • High Voltage Rating: The device is rated for a collector-emitter voltage (V<sub>CE) of 650V, providing a comfortable margin for systems that experience voltage spikes or surges.
  • Low On-State Voltage: The FGA40T65SHD features a low on-state voltage (V<sub>CE(sat)) that minimizes conduction losses and improves overall system efficiency.
  • Fast Switching Speed: The fast switching capability of the IGBT reduces switching losses and enables operation at higher frequencies, which can lead to smaller and more cost-effective system designs.
  • Co-Packaged Free Wheeling Diode: A co-packaged soft recovery anti-parallel diode enhances performance during the switching phase and reduces electromagnetic interference (EMI).

Advanced Technology for Enhanced Performance

The FGA40T65SHD incorporates advanced Field Stop Trench technology, which provides a perfect balance between conduction and switching losses. This technology leads to improved thermal performance and higher efficiency in power conversion systems. Additionally, the device's robustness is enhanced by its maximum junction temperature of 175°C, allowing for reliable operation even under stressful thermal conditions.

Applications

Due to its exceptional features, the FGA40T65SHD is highly versatile and can be used in various applications. It is particularly well-suited for:

  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Induction Heating
  • High-Frequency Welders
  • Power Factor Correction (PFC) Circuits

ON Semiconductor's commitment to excellence is evident in the FGA40T65SHD, making it a top choice for engineers and designers looking for a reliable IGBT solution that does not compromise on performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
13+ $3.9320 $51.1160
31+ $3.2263 $100.0153
48+ $3.1255 $150.0240
67+ $3.0247 $202.6549
86+ $2.9238 $251.4468
115+ $2.6214 $301.4610
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 23,554 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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