ON Semiconductor FQH140N10 N-Channel QFET® MOSFET

The ON Semiconductor FQH140N10 is a high-performance N-Channel QFET® MOSFET designed to deliver efficient power management and conversion in a variety of applications. This device is a part of ON Semiconductor's portfolio of energy-efficient power solutions, aimed to meet the demands of modern electronic circuits requiring low on-resistance, high switching speeds, and minimal power loss.

Key Features:

• High Current Capability: The FQH140N10 is capable of handling a continuous drain current of up to 140A, making it suitable for high-power applications.
• Low On-Resistance: With a typical on-resistance of just 10 mOhms at Vgs = 10V, this MOSFET ensures minimal voltage drop and power loss during operation, enhancing overall system efficiency.
• High Switching Speed: The device features fast switching performance, which is critical for reducing switching losses in power conversion circuits.
• Robust Thermal Performance: The MOSFET is housed in a TO-247 package, known for its excellent thermal characteristics, ensuring reliable operation even at elevated temperatures.
• 100% Avalanche Tested: Guaranteed performance under extreme conditions, the FQH140N10 is tested for avalanche ruggedness, providing additional reliability.

Applications:

The versatility of the FQH140N10 N-Channel MOSFET allows it to be used in various applications, including:

• DC/DC converters
• Motor drives
• Power supply units
• Automotive applications
• Switching regulators
• Power management in computing and telecommunications

Specifications:

Parameter Value Drain-to-Source Voltage (Vdss) 100V Continuous Drain Current (Id) 140A Rds (On) at Vgs=10V 10 mOhms Power Dissipation (Pd) 375W Operating Temperature Range -55°C to +175°C

Overall, the FQH140N10 from ON Semiconductor is a robust and efficient solution for power management tasks that require high current, low on-resistance, and fast switching in a compact and reliable package.