The ON Semiconductor FQPF3N80 is a high-performance N-Channel QFET® MOSFET designed to provide exceptional power efficiency and reliability for a wide range of applications. This MOSFET features a drain-to-source voltage (V<sub>DS) of 800V, which makes it suitable for high-voltage power management tasks.

Key Features

• High Voltage Tolerance: With an 800V drain-to-source voltage, the FQPF3N80 is capable of handling high-voltage applications, making it ideal for power supply systems, lighting, and industrial applications.
• Low On-Resistance: The device offers a low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved efficiency in electronic circuits.
• Fast Switching Speed: The MOSFET's fast switching capabilities ensure minimal losses during the transition phases, which is crucial for high-frequency operations.
• Extended Safe Operating Area: The FQPF3N80's robust design allows for reliable operation even under harsh conditions, ensuring a wide safe operating area (SOA).

Applications

The versatility of the FQPF3N80 MOSFET allows it to be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• Power Inverters
• Motor Control Systems
• High-Voltage DC/DC Converters
• Lighting Systems
• Industrial Power Management

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DS) 800V Continuous Drain Current (I<sub>D) 3A Power Dissipation (P<sub>D) 125W R<sub>DS(on) 2.5Ω Operating Temperature Range -55°C to +150°C

With its robust design and high-voltage capability, the ON Semiconductor FQPF3N80 MOSFET is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability.