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FQPF5N20

Part No FQPF5N20
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 200V N-Channel MOSFET | MOSFET N-CH 200V 3.5A TO-220F
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 200V
Id - Continuous Drain Current 3.5A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 1.2Ohm at 1.75A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 7.5nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 270pF at 25V
Power Dissipation (Maximum) 32W
Temperature Range - Operating -55°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package TO-220F
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level 1 (Unlimited)
Win Source Part Number 1175484-FQPF5N20
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FQPF5N20 CAD Model

Description

ON Semiconductor FQPF5N20 N-Channel QFET® MOSFET

The ON Semiconductor FQPF5N20 is a high-performance N-Channel QFET® MOSFET that offers a combination of low on-resistance and high switching performance, making it ideal for a wide range of power management applications. This device is designed to address the needs of engineers looking for a MOSFET that can handle high-power and high-efficiency requirements with ease.

The FQPF5N20 features a drain-to-source voltage (V<sub>DS) of 200V, which allows it to be used in circuits with high voltage requirements. Its continuous drain current (I<sub>D) of 4.5A makes it suitable for handling moderate power levels. The device boasts a low on-state resistance (R<sub>DS(on)) of 1.25Ω, which minimizes power loss and improves overall efficiency when conducting.

One of the key attributes of the FQPF5N20 is its fast switching speed, which is crucial for applications that require rapid on-off cycling. This feature helps in reducing switching losses and is particularly beneficial in high-frequency power converters and inverters. Additionally, the MOSFET's low gate charge (Q<sub>g) enhances its switching performance, further contributing to the efficiency of the system.

The FQPF5N20 is housed in a TO-220F full-pack package, which provides excellent thermal performance and is easy to mount on a printed circuit board. The package is designed for through-hole mounting, ensuring a robust and secure connection for high-reliability applications. Its compact form factor makes it a suitable choice for designs where space is at a premium.

Applications for the FQPF5N20 are diverse and include power supplies, DC-DC converters, motor drives, lighting systems, and other power-related functions. Its ability to operate at high temperatures, with a junction temperature range of -55°C to +150°C, ensures that it can perform reliably in harsh environments.

In summary, the ON Semiconductor FQPF5N20 is a versatile and efficient N-Channel MOSFET that offers designers a balance of high voltage capability, low on-resistance, and fast switching speeds, all packaged in a thermally efficient TO-220F package. It is an excellent choice for engineers looking to optimize their power management systems for better performance and reliability.

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