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FQU8N25TU

Part No FQU8N25TU
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 6.2A IPAK  /  N-Channel 250 V 6.2A (Tc) 2.5W (Ta), 50W (Tc) Through Hole I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 6.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number FQU8
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 70
Win Source Part Number 992358-FQU8N25TU
Ultra Librarian 3D Model Ultra Librarian FQU8N25TU CAD Model

Description

The ON Semiconductor FQU8N25TU is a high-performance, N-channel QFET® MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This robust transistor offers a 250V drain-source voltage (Vds) and a continuous drain current (Id) of 8A, making it an excellent choice for high-voltage power systems.

Key Features

  • Voltage and Current: The FQU8N25TU operates at a drain-source voltage of 250V with a continuous drain current of 8A, ensuring reliable performance in high-voltage environments.
  • Low Rds(on): With a low on-resistance of just 0.85 ohms, this MOSFET minimizes power loss and improves efficiency, which is critical for energy-sensitive designs.
  • High-Speed Switching: The device features fast switching capabilities, which is essential for applications requiring quick response times.
  • Thermal Performance: Excellent thermal characteristics allow for stable operation over a wide temperature range, making it suitable for challenging thermal environments.
  • Package: Enclosed in a TO-251 package, the FQU8N25TU is designed for compact installations, offering a space-saving solution without compromising on power.

Applications

The versatility of the FQU8N25TU MOSFET makes it ideal for a diverse array of applications. It is particularly well-suited for:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Lighting systems
  • Automotive applications
  • Switching regulators

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability. The FQU8N25TU is no exception, as it is manufactured to meet the highest industry standards. With its robust design and ON Semiconductor's rigorous testing, this MOSFET ensures long-term reliability for critical applications.

Conclusion

The FQU8N25TU from ON Semiconductor is a powerful solution for designers looking to enhance efficiency and performance in high-voltage power systems. Its combination of low on-resistance, high-speed switching, and excellent thermal performance make it a go-to component for a wide range of electronic applications.

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