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FSS273-TL-E

Part No FSS273-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL MOSFET
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 22mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2225 pF @ 20 V
Power Dissipation (Max) 2.4W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.173", 4.40mm Width)
Standard Package 567 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 823620-FSS273-TL-E
Ultra Librarian 3D Model Ultra Librarian FSS273-TL-E CAD Model

Description

ON Semiconductor FSS273-TL-E: Precision Power MOSFET

The ON Semiconductor FSS273-TL-E is a cutting-edge precision power MOSFET designed for a variety of applications that demand high efficiency and reliability. This device is a testament to ON Semiconductor's commitment to providing innovative solutions for power management challenges in the electronics industry.

The FSS273-TL-E boasts a low on-resistance (R<sub>DS(on)) which significantly reduces conduction losses, making it an ideal choice for power-intensive applications. It operates as an N-channel MOSFET with a maximum continuous drain current of 3.5A, allowing for robust performance in a compact form factor. The device is capable of handling a maximum drain-source voltage (V<sub>DSS) of 30V, ensuring that it can accommodate a wide range of power requirements.

In terms of thermal management, the FSS273-TL-E features a power dissipation of 1.25W, which contributes to its overall efficiency and longevity. The device's low threshold voltage ensures that it can be easily driven by low-voltage control circuits, making it highly versatile in various electronic designs.

ON Semiconductor has packaged the FSS273-TL-E in a SuperSOT™-6 package, which is not only space-efficient but also offers excellent thermal characteristics. This packaging is designed to optimize board space without compromising performance, making it suitable for high-density power applications.

The FSS273-TL-E is also characterized by its fast switching speed, which is crucial for applications that require quick response times, such as switch-mode power supplies, motor controllers, and DC-DC converters. Its low gate charge (Q<sub>G) further enhances its switching performance, leading to reduced switching losses and improved overall efficiency.

This MOSFET is RoHS compliant, reflecting ON Semiconductor's dedication to environmental responsibility. The FSS273-TL-E is an excellent choice for designers looking to create energy-efficient, high-performance products in sectors such as consumer electronics, computing, industrial, and automotive systems.

In summary, the FSS273-TL-E from ON Semiconductor is a high-performance, precision power MOSFET that offers a compelling mix of efficiency, reliability, and compactness, making it a top choice for modern electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.9286 $59.2860
24+ $4.8649 $116.7576
37+ $4.7124 $174.3588
51+ $4.5611 $232.6161
66+ $4.4086 $290.9676
88+ $3.9524 $347.8112
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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