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HGT1S20N36G3VL

Part No HGT1S20N36G3VL
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs | IGBT 395V 37.7A 150W TO262AA
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Voltage - Collector Emitter Breakdown (Maximum) 395V
Current - Collector (Ic) (Maximum) 37.7A
Vce(on) (Maximum) at Vge, Ic 1.9V at 5V, 20A
Maximum Power 150W
Input Type Logic
Gate Charge 28.7nC
Td (on/off) at 25°C -/15μs
Test Condition 300V, 10A, 25Ohm, 5V
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Manufacturer Pack Quantity 400
MSL Level 1 (Unlimited)
Win Source Part Number 1180343-HGT1S20N36G3VL
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian HGT1S20N36G3VL CAD Model

Description

The HGT1S20N36G3VL is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a leading provider of semiconductor-based solutions. This IGBT is designed to offer a high level of performance for a wide range of applications, including motor control, inverters, and power management systems. With its robust construction and advanced technology, the HGT1S20N36G3VL is a reliable choice for engineers and designers looking to enhance the efficiency and longevity of their electronic designs.

Key Features

  • High Voltage Capability: This IGBT is capable of supporting a collector-emitter voltage (Vce) of up to 360V, making it suitable for high voltage applications.
  • Low On-State Voltage: The device exhibits a low on-state voltage drop, which helps in reducing conduction losses and improves overall system efficiency.
  • High Current Rating: With a continuous collector current (Ic) rating of 20A at 25°C, the HGT1S20N36G3VL can handle significant power levels, making it ideal for heavy-duty operations.
  • Fast Switching Speed: The IGBT features a fast switching speed, which is crucial for reducing switching losses and improving performance in high-frequency applications.
  • Co-Packaged with Free-Wheeling Diode: The inclusion of a co-packaged freewheeling diode provides added protection against reverse voltage spikes and simplifies circuit design.

Applications

  • AC and DC motor drives
  • Uninterruptible power supplies (UPS)
  • Power factor correction (PFC) circuits
  • Inductive heating and welding equipment
  • Renewable energy inverters

The HGT1S20N36G3VL from ON Semiconductor is a testament to the company's commitment to providing high-quality, reliable components that push the boundaries of power management technology. Its combination of high voltage capacity, low on-state voltage, and fast switching capabilities make it a versatile component that meets the demanding requirements of modern electronic systems. Whether for industrial, commercial, or renewable energy applications, the HGT1S20N36G3VL IGBT is engineered to deliver superior performance and efficiency.

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