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HGT1S20N60C3S9A

Part No HGT1S20N60C3S9A
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description 45A, 600V, UFS Series N-Channel IGBT | IGBT 600V 45A 164W TO263AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 45A
Current - Collector Pulsed (Icm) 300A
Vce(on) (Maximum) at Vge, Ic 1.8V at 15V, 20A
Maximum Power 164W
Switching Energy 295μJ (on), 500μJ (off)
Input Type Standard
Gate Charge 91nC
Td (on/off) at 25°C 28ns/151ns
Test Condition 480V, 20A, 10Ohm, 15V
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1180346-HGT1S20N60C3S9A
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HGT1S20N60C3S9A CAD Model

Description

ON Semiconductor HGT1S20N60C3S9A IGBT Overview

The HGT1S20N60C3S9A is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) developed by ON Semiconductor, a renowned leader in power and signal management solutions. This IGBT is designed to meet the demanding needs of high-efficiency power electronics applications. It is well-suited for a wide range of uses, including inverters, converters, motor drives, and power management systems.

Key Features

  • High Current Capability: The device is capable of conducting a continuous collector current of up to 60A, making it suitable for high-power applications.
  • High Voltage Rating: With a collector-emitter voltage rating of 600V, the HGT1S20N60C3S9A ensures reliable operation in circuits with high voltage stress.
  • Low On-State Voltage: The IGBT features a low on-state voltage drop to minimize conduction losses and improve overall efficiency.
  • Fast Switching Speed: The fast switching characteristics of the device contribute to reduced switching losses and improved performance in high-frequency applications.
  • Robustness: The HGT1S20N60C3S9A is designed with a ruggedized package to withstand harsh operating conditions and ensure a long operational lifespan.

Applications

The versatility of the HGT1S20N60C3S9A IGBT allows it to be used in a variety of applications. It is particularly well-suited for AC and DC motor drives, where efficient power control is crucial. Additionally, its high current and voltage capabilities make it an excellent choice for power inverters in renewable energy systems, such as solar and wind power installations. Other applications include Uninterruptible Power Supplies (UPS), induction heating, and power factor correction circuits.

Quality and Reliability

ON Semiconductor is committed to the highest standards of quality and reliability, and the HGT1S20N60C3S9A is no exception. It is manufactured with state-of-the-art processes and subjected to rigorous testing to ensure it meets the stringent requirements of industrial and consumer applications. Customers can rely on this IGBT to deliver consistent performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9920 $59.9040
28+ $4.0961 $114.6908
43+ $3.9680 $170.6240
59+ $3.8400 $226.5600
76+ $3.7120 $282.1120
101+ $3.3280 $336.1280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 393 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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