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HMBT2222AXLT1

Part No HMBT2222AXLT1
Manufacturer ON Semiconductor
Catalog HOT - SALES and EOL Components (H - K)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer ON Semiconductor
Win Source Part Number 275321-HMBT2222AXLT1
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HMBT2222AXLT1 CAD Model

Description

The HMBT2222AXLT1 is a high-performance NPN bipolar junction transistor (BJT) from ON Semiconductor, a leader in energy-efficient innovations. This device is designed to cater to a wide range of applications requiring signal amplification, switching, and high-speed operation. It is a versatile component that is well-suited for various electronic circuits, including consumer electronics, industrial control systems, and communication devices.

Key Features

  • High Current Gain: The HMBT2222AXLT1 offers a high current gain (hFE), which allows for significant amplification of the input signal. This makes it ideal for applications where a small input current needs to control a larger output current.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which reduces power loss and improves efficiency in switching applications.
  • Fast Switching Times: With its quick transition from the 'on' to 'off' states and vice versa, the HMBT2222AXLT1 is suitable for high-speed switching applications.
  • High Reliability: Manufactured by ON Semiconductor, the HMBT2222AXLT1 is built to high-quality standards, ensuring reliable performance even under demanding conditions.
  • Compact SOT-23 Package: The small surface-mount package is ideal for space-constrained applications and allows for efficient use of PCB real estate.

Applications

The HMBT2222AXLT1 can be used in a variety of electronic circuits, including:

  • Amplifiers and audio devices
  • Signal processing
  • Switching regulators
  • Motor control circuits
  • Power management solutions

Technical Specifications

The HMBT2222AXLT1 boasts the following technical specifications:

  • Transistor Polarity: NPN
  • Collector-Emitter Voltage (VCEO): 40V
  • Collector Current (IC): 600mA
  • Power Dissipation (Pd): 350mW
  • DC Current Gain (hFE): 100 to 300
  • Operating Temperature Range: -55°C to +150°C

With its robust performance and ON Semiconductor's reputation for quality, the HMBT2222AXLT1 is a reliable choice for designers looking to incorporate a dependable NPN transistor into their electronic designs.

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