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HUF75343S3S

Part No HUF75343S3S
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 75A D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 55 V 75A (Tc) 270W (Tc) Surface Mount D²PAK
Manufacturer ON Semiconductor
Series UltraFET™
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Surface Mount
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Case / Package D2PAK
Family Name HUF75
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 400
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 874006-HUF75343S3S
Ultra Librarian 3D Model Ultra Librarian HUF75343S3S CAD Model

Description

ON Semiconductor HUF75343S3S N-Channel Power MOSFET

The ON Semiconductor HUF75343S3S is a high-performance, N-Channel Power MOSFET designed to deliver efficient power management and conversion for a wide array of applications. This robust semiconductor device is known for its low on-state resistance, high switching speeds, and the ability to handle significant power levels, making it an ideal choice for power supply designers and engineers looking to enhance system reliability and efficiency.

Key Features

  • High Current Handling: With a continuous drain current of 75A, the HUF75343S3S can handle high levels of current, making it suitable for demanding applications.
  • Low On-Resistance: The device boasts an extremely low on-resistance of 8.0 mΩ, which minimizes power loss and improves overall efficiency.
  • High-Speed Switching: Engineered for fast switching applications, this MOSFET is capable of operating at high frequencies, which is beneficial for power converters and inverters.
  • Robust Thermal Performance: The HUF75343S3S is encapsulated in a TO-263 package, which provides excellent thermal performance and aids in heat dissipation.

Applications

The versatility of the HUF75343S3S makes it suitable for a wide range of applications, including:

  • DC to DC converters
  • Motor drives
  • Power management systems
  • Automotive applications
  • Switching regulators
  • Synchronous rectification

Electrical Characteristics

With a maximum drain-source voltage (Vds) of 55V, the HUF75343S3S is designed to operate in various circuit configurations. Its gate threshold voltage (Vgs th) is specified at a typical value of 2.0V, allowing for a wide range of gate drive voltages. The maximum power dissipation is 200W, ensuring that the device can manage considerable power without compromising its integrity.

In summary, the HUF75343S3S N-Channel Power MOSFET from ON Semiconductor is a reliable and efficient solution for high-power applications requiring fast switching and low power loss. Its robust design and thermal performance make it a go-to component for engineers looking to optimize their power systems for performance and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7243 $60.3505
85+ $1.4149 $120.2665
130+ $1.3707 $178.1910
175+ $1.3264 $232.1200
230+ $1.2823 $294.9290
305+ $1.1496 $350.6280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,850 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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