EN
  • EN
  • DE

HUF75829D3

Part No HUF75829D3
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET | MOSFET N-CH 150V 18A IPAK
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 150V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 110mOhm at 18A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 70nC at 20V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1080pF at 25V
Power Dissipation (Maximum) 110W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style Through Hole
Supplier Device Package I-PAK
Manufacturer Package TO-251-3 Short Leads, IPak, TO-251AA
Manufacturer Pack Quantity 1,800
MSL Level 1 (Unlimited)
Win Source Part Number 1182443-HUF75829D3
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUF75829D3 CAD Model

Description

Product Overview: HUF75829D3 by ON Semiconductor

The HUF75829D3 is a high-performance N-Channel UltraFET Power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is part of a robust portfolio of power management solutions that cater to a wide range of applications, including automotive, industrial, and consumer electronics.

Engineered for optimal performance, the HUF75829D3 boasts a 75A, 30V rating, making it an excellent choice for high-current and high-voltage operations. The device is characterized by its low on-state resistance (R<sub>DS(on)), which significantly reduces conduction losses, thereby improving overall energy efficiency. This feature is particularly beneficial in applications that demand minimal power dissipation and extended battery life.

The HUF75829D3 incorporates advanced UltraFET technology that enhances its switching performance. This technology ensures that the MOSFET has fast switching speeds, a critical attribute for power supplies and DC-DC converters where high-frequency operation is paramount. The fast switching speeds also contribute to reduced switching losses, further enhancing the efficiency of the overall system.

The robustness of the HUF75829D3 is evidenced by its maximum junction temperature of 175°C, allowing it to perform reliably even under extreme thermal conditions. This durability makes it suitable for demanding environments and ensures a long operational lifespan, thereby reducing maintenance costs and system downtime.

ON Semiconductor has designed the HUF75829D3 with a TO-252 DPAK package, which not only ensures a compact footprint but also offers excellent thermal performance. The DPAK package is widely recognized for its ease of installation and is compatible with standard surface-mount technology (SMT), simplifying the assembly process and facilitating mass production.

In summary, the HUF75829D3 from ON Semiconductor is a state-of-the-art N-Channel Power MOSFET that delivers high efficiency, fast switching, and robust thermal performance. Its superior specifications make it an ideal choice for designers looking to optimize power management in their applications while maintaining reliability and cost-effectiveness.

You May Also Be Interested in

Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT323 T&R
Need more? Email Us
Toshiba Semiconductor and Storage
PB-F POWER MOSFET TRANSISTOR DSO
Lowest to $2.4545
Littelfuse Inc.
MOSFET P-CH 85V 96A TO263
Lowest to $6.5951
Infineon Technologies
MOSFET P-CH 12V 4.3A SOT-23
Lowest to $0.1062
Renesas Electronics America
MP-25LZU
Lowest to $12.5357
Nexperia USA Inc.
2N7002H/SOT23/TO-236AB
Lowest to $0.8602
Littelfuse Inc.
MOSFET N-CH 300V 94A TO268
Lowest to $40.9090
Diodes Incorporated
MOSFET N-CH 30V 900MA SOT23
Lowest to $0.2136
Infineon Technologies
MOSFET N-CH 25V 40A/100A TDSON
Lowest to $1.6042

Top Sellers

Bosch Sensortec
IMU ACCEL/GYRO I2C/SPI 14LGA / Accelerometer, Gyroscope, 6 Axis Sensor I2C, SPI Output
Lowest to $3.6828
Nexperia USA Inc.
DIODE GEN PURP 100V 250MA SOD523
Lowest to $0.0214
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
TDK InvenSense
IMU ACCEL/GYRO/TEMP I2C/SPI LGA
Lowest to $10.4542
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $14.1369
Peregrine Semiconductor
RF ATTENUATOR 31.5DB 50OHM 20QFN
Lowest to $2.2891
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $14.1369
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $3.5640
FTDI, Future Technology Devices International Ltd
USB-to-UART 1-CH 512byte FIFO 5V 12-Pin DFN EP T/R / IC USB SERIAL BASIC UART 12DFN
Lowest to $4.5143
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.9399
Altera
IC CPLD 128MC 10NS 100TQFP
Lowest to $3.3015
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.7023
Atheros
Ethernet TXRX Single Chip 1-Port 3.3V 10Mbps/100Mbps/1000Mbps 48-Pin QFN EP Tray
Lowest to $2.6071
Solomon
LCD Display Controller 128-Pin LQFP Tray
Lowest to $7.4300
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess