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HUFA75639S3ST

Part No HUFA75639S3ST
Manufacturer ON Semiconductor
Catalog FETs - Single
Description 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 100V
Id - Continuous Drain Current 56A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 25mOhm at 56A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 130nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 2000pF at 25V
Power Dissipation (Maximum) 200W
Temperature Range - Operating -55°C ~ 175°C
Mounting Style SMD
Supplier Device Package D2PAK (TO-263AB)
Manufacturer Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1182488-HUFA75639S3ST
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian HUFA75639S3ST CAD Model

Description

ON Semiconductor HUFA75639S3ST Product Overview

The ON Semiconductor HUFA75639S3ST is a high-performance, N-Channel UltraFET Power MOSFET designed for a range of applications requiring efficient power management and high reliability. This MOSFET utilizes advanced silicon technology to provide an optimal solution for power supply, motor control, and general-purpose switching applications.

Key Features

  • High Current Capability: The HUFA75639S3ST is capable of handling continuous drain currents up to 75A, making it suitable for high-power applications.
  • Low On-Resistance: With an R<sub>DS(on) of just 0.008 ohms, this MOSFET ensures minimal power loss and improves overall efficiency.
  • High Switching Speed: The device is designed for fast switching, reducing transition losses and enhancing performance in high-frequency circuits.
  • Robust Thermal Performance: The MOSFET's package is designed to offer excellent heat dissipation, ensuring reliable operation even under high thermal conditions.
  • Voltage Rating: It has a drain-to-source voltage (V<sub>DSS) of 100V, which is suitable for a wide range of operating conditions.
  • Gate Charge: The product features a low gate charge (Q<sub>G), which contributes to its fast switching capabilities.

Applications

The ON Semiconductor HUFA75639S3ST is versatile and can be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-to-DC converters
  • Motor Drives
  • Power Inverters
  • Battery Management Systems
  • Automotive and Industrial Control Systems

Quality and Reliability

ON Semiconductor is known for its commitment to quality and reliability, and the HUFA75639S3ST is no exception. It is designed to meet rigorous industry standards, ensuring long-term reliability and performance in even the most demanding applications.

Environmental Compliance

The HUFA75639S3ST is RoHS compliant, demonstrating ON Semiconductor's dedication to environmental responsibility by reducing the use of hazardous substances in electronics.

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