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IMD10AMT1G

Part No IMD10AMT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description Dual Bias Resistor Transistor | TRANS NPN/PNP PREBIAS SC74R
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Maximum) 500mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) 13kOhms, 130Ohms
Resistor - Emitter Base (R2) 10kOhms
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 1mA, 5V / 68 at 100mA, 5V
Vce Saturation (Maximum) at Ib, Ic 300mV at 1mA, 10mA
Current - Collector Cutoff (Maximum) 500nA
Maximum Power 285mW
Mounting Style SMD
Manufacturer Package SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SC-74R
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1185556-IMD10AMT1G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IMD10AMT1G CAD Model

Description

The IMD10AMT1G is a high-performance, energy-efficient N-Channel MOSFET from ON Semiconductor, a renowned leader in the semiconductor industry. This compact and robust transistor is designed for a variety of applications, delivering superior power management and signal processing capabilities to a wide range of electronic devices.

Key Features

  • Low On-Resistance: The IMD10AMT1G offers exceptionally low on-resistance, which results in reduced power loss and improved efficiency in electronic circuits.
  • High-Speed Switching: With its fast switching speed, this MOSFET is ideal for high-frequency applications, ensuring minimal delay and high performance in power conversion and management tasks.
  • Low Threshold Voltage: The device operates at a low threshold voltage, making it suitable for low-voltage applications and ensuring it can be driven by logic-level voltages.
  • Small Package: Housed in a compact SOT-23 package, the IMD10AMT1G is perfect for space-constrained applications, allowing for miniaturization of the end product without compromising performance.

Applications

The versatile nature of the IMD10AMT1G makes it suitable for a broad range of applications, including but not limited to:

  • Power Management Systems
  • DC/DC Converters
  • Battery-Powered Devices
  • Motor Control Circuits
  • Load/Power Switching
  • Portable Electronic Devices

Product Specifications

The IMD10AMT1G boasts a continuous drain current (I<sub>D) of 830 mA and a power dissipation (P<sub>D) of 225 mW. The device operates within a junction temperature range of -55°C to 150°C, making it reliable across various environmental conditions. It also features a maximum gate-source voltage (V<sub>GS) of ±20 V, providing designers with a robust transistor capable of handling a wide range of applications.

Quality and Reliability

ON Semiconductor is committed to delivering high-quality and reliable components. The IMD10AMT1G is no exception, as it is manufactured with the industry's stringent standards, ensuring optimal performance and durability for the end-user.

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Pricing & Ordering

Quantity Unit Price Ext. Price
300+ $0.1677 $50.3100
730+ $0.1376 $100.4480
1,130+ $0.1333 $150.6290
1,555+ $0.1290 $200.5950
2,005+ $0.1247 $250.0235
2,685+ $0.1118 $300.1830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,732 pieces
MOQ: 300 pcs
Order Increment : 1 pcs
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