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IXTZ550N055T2

Name: IXTZ550N055T2
Brand: IXYS
SKU: 1346721
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	IXTZ550N055T2
Manufacturer	IXYS
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 55V 550A DE475 / N-Channel 55 V 550A (Tc) 600W (Tc) Surface Mount DE475
Datasheet	IXTZ550N055T2 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	IXYS
Series	TrenchT2™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	550A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	595 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40000 pF @ 25 V
Power Dissipation (Max)	600W (Tc)
Temperature Range - Operating	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DE475
Package / Case	6-SMD, Flat Leads
Base Product Number	IXTZ550
Standard Package	20
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
California Prop 65	Warning Information
Win Source Part Number	1346721-IXTZ550N055T2
Ultra Librarian 3D Model	Ultra Librarian IXTZ550N055T2 CAD Model

Alternative Products

Description

The IXTZ550N055T2 is an N-channel MOSFET transistor from the TrenchT2 series, designed for use in discrete semiconductor products such as FETs and MOSFETs.

Drain-to-Source Voltage: 55V
Maximum Power Dissipation: 600W
Package: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Temperature Range: -55°C to 175°C
Continuous Drain Current: 550A (Tc)
Maximum Rds On: 1mOhm @ 100A, 10V
Gate Charge: 595 nC @ 10 V
Input Capacitance: 40000 pF @ 25 V

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