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KSB1366GTU

Part No KSB1366GTU
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description LOW FREQUENCY POWER AMPLIFIER | TRANS PNP 60V 3A TO-220F
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
Transistor Type PNP
Current - Collector (Ic) (Maximum) 3A
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 1V at 200mA, 2A
Current - Collector Cutoff (Maximum) 100μA (ICBO)
DC Current Gain (hFE) (Minimum) at Ic, Vce 150 at 500mA, 5V
Maximum Power 2W
Frequency - Transition 9MHz
Temperature Range - Operating 150°C
Mounting Style Through Hole
Manufacturer Package TO-220-3 Full Pack
Supplier Device Package TO-220F
Family Part Number KSB1366
Manufacturer Pack Quantity 1,000
MSL Level 1 (Unlimited)
Win Source Part Number 1193553-KSB1366GTU
Manufacturer Homepage www.fairchildsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Signal Processing, Communications & Networking, Portable Devices
Ultra Librarian 3D Model Ultra Librarian KSB1366GTU CAD Model

Description

Introducing the KSB1366GTU - A Robust Bipolar Transistor from ON Semiconductor

The KSB1366GTU is a state-of-the-art bipolar junction transistor (BJT) developed by ON Semiconductor, a company renowned for its innovative and reliable semiconductor solutions. This high-performance transistor is designed to meet the demanding requirements of modern electronic applications, providing both high-speed switching and amplification with remarkable efficiency.

Key Features

  • High Current Capacity: The KSB1366GTU is capable of handling significant current levels, making it suitable for power amplification in audio applications and other high-power circuits.
  • Low Saturation Voltage: This transistor has a low collector-emitter saturation voltage, which minimizes power loss and improves overall system efficiency.
  • High Power Dissipation: With its ability to dissipate high levels of power, the KSB1366GTU is ideal for applications that require robust performance under challenging conditions.
  • Excellent Gain Linearity: The device offers excellent gain linearity, which is crucial for maintaining signal fidelity in amplification tasks.
  • Complementary PNP Type Available: ON Semiconductor provides a complementary PNP type transistor, making it easier for designers to implement push-pull configurations in their circuits.

Applications

The KSB1366GTU is versatile and can be used in a wide range of applications, including:

  • Audio Power Amplifiers
  • Switching Power Supplies
  • DC-DC Converters
  • Motor Controllers
  • General Purpose Switching and Amplification

Quality and Reliability

ON Semiconductor is committed to delivering products that adhere to the highest standards of quality and reliability. The KSB1366GTU is manufactured using state-of-the-art processes, ensuring consistent performance and longevity in the field. It is also supported by ON Semiconductor's comprehensive technical resources, including detailed datasheets, application notes, and design support.

Conclusion

Whether you're designing a high-fidelity audio system or a robust power management solution, the KSB1366GTU from ON Semiconductor is an excellent choice that combines performance, efficiency, and reliability. Its advanced features and versatile applications make it an invaluable component in any electronic designer's toolkit.

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