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MBRD350T4G

Part No MBRD350T4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE SCHOTTKY 50V 3A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 50V
Current - Average Rectified (Io) 3A
Voltage - Forward (Vf) (Max) @ If 600mV @ 3A
Speed(Frequency) Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr 200μA @ 50V
Mounting SMD (SMT)
Case / Package DPAK-3
Operating Temperature - Junction -65°C to 150°C
Win Source Part Number 074315-MBRD350T4G
Ultra Librarian 3D Model Ultra Librarian MBRD350T4G CAD Model

Description

The MBRD350T4G is a robust Schottky Barrier Rectifier designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This high-performance rectifier is engineered to provide low forward voltage drop, minimal reverse leakage, and a high surge capability, making it an ideal choice for high-efficiency power supply applications.

Key Features

  • High Surge Capacity: The device can handle high surge currents, making it reliable for applications that experience transient overcurrent conditions.
  • Low Power Loss: With its low forward voltage drop, the MBRD350T4G ensures reduced power loss, which is crucial for maintaining efficiency in power conversion systems.
  • High Frequency Operation: Its fast switching capability allows the MBRD350T4G to operate efficiently at high frequencies, which is beneficial for modern, compact power supplies.
  • Low Thermal Resistance: The rectifier's low thermal resistance enables better heat dissipation, contributing to a longer operational lifespan and reliability.
  • Lead-Free and RoHS Compliant: The MBRD350T4G is designed with environmental considerations in mind, meeting RoHS directives and being completely lead-free.

Specifications

  • Package: D2PAK (TO-263)
  • Peak Repetitive Reverse Voltage (V<sub>RRM): 35 V
  • Average Rectified Forward Current (I<sub>F(AV)): 3 A
  • Maximum Forward Voltage Drop (V<sub>F): 0.52 V at 3 A
  • Maximum Reverse Leakage Current (I<sub>R): 500 µA at 35 V
  • Operating Junction Temperature Range: -55°C to +150°C

Applications

The MBRD350T4G is versatile and can be used in a variety of applications, including:

  • Switching power supplies
  • Converters
  • Free-wheeling diodes
  • Reverse battery protection
  • Automotive applications
  • DC-DC modules

In summary, the MBRD350T4G Schottky Barrier Rectifier from ON Semiconductor is an exceptional component that offers the efficiency, reliability, and performance required by modern electronic applications. Its compliance with environmental standards further ensures that it is a forward-thinking choice for both industrial and consumer products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7179 $50.2530
170+ $0.5890 $100.1300
265+ $0.5706 $151.2090
365+ $0.5522 $201.5530
470+ $0.5338 $250.8860
630+ $0.4786 $301.5180
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,950 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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