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MBT3946DW1T2G

Part No MBT3946DW1T2G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 300MHz, 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 022478-MBT3946DW1T2G
Ultra Librarian 3D Model Ultra Librarian MBT3946DW1T2G CAD Model

Description

Introducing the ON Semiconductor MBT3946DW1T2G

The ON Semiconductor MBT3946DW1T2G is a cutting-edge, dual Bipolar Junction Transistor (BJT) device that offers a combination of high efficiency and reliability for a wide range of applications. This product is designed to meet the stringent requirements of modern electronic circuits, providing both NPN and PNP transistors in a single package, which facilitates compact and versatile circuit designs.

Key Features

  • Dual Configuration: The MBT3946DW1T2G contains one NPN and one PNP transistor, allowing for efficient complementary or push-pull configurations within a single SOT-363 package.
  • High Power Dissipation: With a power dissipation of 225 mW, this device can handle moderate power applications, making it suitable for a variety of uses.
  • Low Collector-Emitter Saturation Voltage: The low V<sub>CE(sat) values ensure reduced power loss and improved efficiency when the transistor is in the on-state.
  • High Current Gain Bandwidth Product: The device offers excellent frequency response characteristics, making it ideal for amplification of high-frequency signals.

Applications

The MBT3946DW1T2G is designed for general-purpose amplifier and switching applications. Its dual-transistor configuration makes it particularly useful in applications such as:

  • Signal amplification in audio and communication devices
  • DC-DC converters
  • Motor control circuits
  • Power management systems

Product Specifications

The ON Semiconductor MBT3946DW1T2G offers the following specifications:

  • Collector-Emitter Voltage (VCEO): 40V for NPN, -40V for PNP
  • Collector Current (IC): 200 mA for both NPN and PNP
  • DC Current Gain (hFE): High hFE to ensure a good static characteristic
  • Package: SOT-363, a compact surface-mount package that saves valuable board space
  • RoHS Compliant: Yes, the device meets environmental standards for hazardous substance regulations

Whether you're designing consumer electronics, industrial control systems, or automotive modules, the ON Semiconductor MBT3946DW1T2G provides the performance and versatility needed to create efficient and reliable designs. Its dual-transistor design not only simplifies circuit layouts but also enhances overall functionality, making it an excellent choice for your next project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,500+ $0.0334 $50.1000
3,195+ $0.0313 $100.0035
4,970+ $0.0302 $150.0940
7,120+ $0.0281 $200.0720
9,260+ $0.0270 $250.0200
11,585+ $0.0259 $300.0515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 56,640 pieces
MOQ: 1500 pcs
Order Increment : 1 pcs
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