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MBT6429DW1T1G

Part No MBT6429DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2NPN 45V 0.2A SOT363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN (Dual)
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 45V
Max Vce (sat) 600mV @ 5mA, 100mA
Collector Cut-off Current(Max) 100nA
Typical Gain (hFE) (Min) 500 @ 100μA, 5V
Maximum Power Dissipation 150mW
Frequency - Transition 700MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 074341-MBT6429DW1T1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MBT6429DW1T1G CAD Model

Description

ON Semiconductor MBT6429DW1T1G Dual PNP Transistor

The MBT6429DW1T1G is a high-performance dual PNP transistor manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is designed to offer a compact and efficient solution for a variety of electronic applications. The MBT6429DW1T1G is housed in a small SOT-363 package, making it an ideal choice for space-constrained applications.

With a collector-emitter voltage (VCEO) of -20V and a collector current (IC) of -500mA, this transistor is capable of handling moderate power applications. It also features a collector-base voltage (VCBO) of -30V and an emitter-base voltage (VEBO) of -5V. The MBT6429DW1T1G is characterized by a low collector-emitter saturation voltage and high current gain, which makes it highly efficient in amplification circuits.

The device's dual PNP configuration allows for design flexibility, enabling the use of both transistors in differential amplifiers, push-pull stages, or as independent PNP transistors in a single package. This can lead to reduced component count and simplified PCB layout, thus saving space and potentially reducing manufacturing costs.

The MBT6429DW1T1G is designed with ON Semiconductor's innovative process technology, which ensures reliable performance and longevity. It is a suitable choice for a wide range of applications, including signal processing, power management, and other general-purpose amplification tasks. The device is also characterized by its low noise figure, making it an excellent option for audio applications and other noise-sensitive circuits.

For environmental and regulatory compliance, the MBT6429DW1T1G is lead-free, halogen-free, and RoHS compliant. This ensures that the product is suitable for use in a variety of markets, including those with strict environmental requirements. ON Semiconductor's commitment to quality and environmental stewardship is evident in the design and production of the MBT6429DW1T1G, making it a reliable and sustainable choice for modern electronic designs.

Overall, the MBT6429DW1T1G from ON Semiconductor is a versatile and efficient component that offers designers a compact solution for a wide range of applications, while adhering to environmental standards and providing dependable performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
860+ $0.0583 $50.1380
2,095+ $0.0478 $100.1410
3,240+ $0.0463 $150.0120
4,465+ $0.0448 $200.0320
5,775+ $0.0433 $250.0575
7,715+ $0.0389 $300.1135
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 860 pcs
Order Increment : 1 pcs
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