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MCH6608-TL-E

Part No MCH6608-TL-E
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description NCH+NCH 2.5V DRIVE SERIES / RF Mosfet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs
Mfr ON Semiconductor
Series *
Package Bulk
Product Status Active
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 883980-MCH6608-TL-E
Ultra Librarian 3D Model Ultra Librarian MCH6608-TL-E CAD Model

Description

The MCH6608-TL-E from ON Semiconductor is a sophisticated Power MOSFET designed for high-efficiency power management applications. This compact and reliable semiconductor device is optimized for switching applications, which makes it an ideal choice for a variety of electronic circuits, including power supplies, converters, and motor drives.

Key Features

  • Low On-Resistance: The MCH6608-TL-E boasts an exceptionally low on-resistance, which results in reduced power loss and improved energy efficiency during operation.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET provides faster response times, making it suitable for high-frequency applications.
  • Compact Design: Housed in a small surface-mount package, the MCH6608-TL-E saves valuable board space and is suitable for compact electronic designs.
  • High Reliability: With ON Semiconductor's commitment to quality, this MOSFET is manufactured to withstand harsh operating conditions, ensuring long-term reliability and performance.
  • Low Drive Voltage: It operates at a low drive voltage, which allows for compatibility with a variety of control circuits and reduces the need for level shifting.

Applications

The MCH6608-TL-E is versatile and can be used in a wide range of applications. It is particularly well-suited for:

  • DC/DC Converters
  • Power Management Circuits
  • Load Switches
  • Battery Operated Devices
  • Motor Control Systems

Technical Specifications

Some of the key technical specifications of the MCH6608-TL-E include a drain-to-source voltage (Vdss) of 30V, a continuous drain current (Id) of 6A, and a power dissipation (Pd) of 1.25W. Its low threshold voltage ensures that it can be driven by low-voltage logic signals, making it highly compatible with modern microcontrollers and digital systems.

Conclusion

ON Semiconductor's MCH6608-TL-E is a high-performance Power MOSFET that combines efficiency, speed, and reliability. Its advanced features and robust design make it an excellent choice for designers looking to improve power management in their electronic projects.

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