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MJD122T4G

Part No MJD122T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 100V 8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 100V
Max Vce (sat) 4V @ 80mA, 8A
Collector Cut-off Current(Max) 10μA
Typical Gain (hFE) (Min) 1000 @ 4A, 4V
Maximum Power Dissipation 1.75W
Frequency - Transition 4MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 003595-MJD122T4G
Family Name MJD122
Introduction Date August 31, 1995
ECCN EAR99
Country of Origin China, Malaysia, Vietnam
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management, Automotive
Ultra Librarian 3D Model Ultra Librarian MJD122T4G CAD Model

Description

The MJD122T4G from ON Semiconductor is a high-performance NPN Darlington bipolar power transistor designed for general-purpose amplifier and low-speed switching applications. This component is well-suited for a wide range of industrial, commercial, and consumer products due to its robust performance characteristics and reliability.

Key Features:

  • High DC Current Gain: With a built-in Darlington configuration, the MJD122T4G offers a high DC current gain of 1000 (minimum) at IC = 4 A, making it highly efficient for amplification purposes.
  • Collector-Emitter Sustaining Voltage: It has a VCEO(sus) of 100 V, which provides ample voltage headroom for various applications.
  • High Collector Current: The component can handle a continuous collector current of up to 8 A, allowing it to drive larger loads.
  • Low Collector-Emitter Saturation Voltage: The low saturation voltage helps to reduce power loss and improve efficiency during operation.
  • Monolithic Construction: The monolithic construction with built-in base-emitter shunt resistors offers improved performance and reliability.
  • Surface Mount Package: Packaged in a DPAK (TO-252) surface-mount package, the MJD122T4G is suitable for automated assembly processes and saves valuable board space.

Applications:

The MJD122T4G is versatile and can be used in a variety of applications, including:

  • Linear and switching industrial equipment
  • Power regulators and converters
  • Motor controls
  • Relay and solenoid drivers
  • LED lighting

Quality and Environmental Compliance:

ON Semiconductor is committed to environmental stewardship and the MJD122T4G is no exception. It is compliant with RoHS (Restriction of Hazardous Substances) directives, ensuring that it is free from harmful substances such as lead, mercury, and cadmium. This commitment ensures that the MJD122T4G is suitable for use in environmentally sensitive applications and contributes to the production of greener electronic products.

Whether you are designing power supplies, motor controllers, or other demanding applications, the MJD122T4G offers the performance, reliability, and quality that engineers expect from ON Semiconductor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.3656 $51.1840
295+ $0.3424 $101.0080
455+ $0.3309 $150.5595
650+ $0.3077 $200.0050
845+ $0.2962 $250.2890
1,055+ $0.2846 $300.2530
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 62,000 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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