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MJD253-1G

Part No MJD253-1G
Manufacturer ON Semiconductor
Catalog RF Transistors (BJT)
Description TRANS PNP 100V 4A IPAK  /  Bipolar (BJT) Transistor PNP 100 V 4 A 40MHz 1.4 W Through Hole I-PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr onsemi
Package Tube
Transistor Type PNP
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA, 1V
Power - Max 1.4 W
Frequency - Transition 40MHz
Temperature Range - Operating -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Base Product Number MJD253
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0075
Other Names MJD253-1GOS,MJD2531G,ONSONSMJD253-1G,MJD253-1G-ND,2156-MJD253-1G-OS
Standard Package 75
Win Source Part Number 1078894-MJD253-1G
Ultra Librarian 3D Model Ultra Librarian MJD253-1G CAD Model

Description

The MJD253-1G is a high-performance Power Transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This component is a part of the MJD series, which are surface mountable devices encapsulated in a DPAK (TO-252) package, known for its compact size and robustness. The MJD253-1G is specifically engineered to meet the demands of power regulation tasks within electronic circuits.

Key Features

  • High Current Rating: The MJD253-1G is capable of handling continuous collector currents up to 8 A, making it suitable for high-power applications.
  • High Voltage Tolerance: With a collector-emitter voltage (Vceo) of 100V, this transistor can be employed in circuits with high operating voltages.
  • Low Saturation Voltage: The device exhibits a low collector-emitter saturation voltage, which enhances its efficiency by reducing power dissipation during operation.
  • Fast Switching Speed: The fast switching capabilities of the MJD253-1G ensure efficient operation in circuits requiring quick transitions between on and off states.
  • Thermal Performance: The DPAK package enhances thermal performance, allowing for better heat dissipation and improved reliability at higher currents and temperatures.

Applications

The MJD253-1G is versatile and can be used in a variety of applications. It is particularly well-suited for:

  • Power management in consumer electronics
  • DC-DC converters
  • Motor control circuits
  • Switching regulators
  • LED drivers
  • Automotive and industrial systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The MJD253-1G is built to meet stringent quality standards, ensuring reliable performance in critical applications. Its robust design is aimed at providing a long operational lifespan even under challenging conditions.

Environmental Compliance

Adhering to environmental regulations, the MJD253-1G is lead-free and RoHS compliant, minimizing the environmental impact and making it suitable for use in eco-friendly products.

Whether you're designing power supplies, motor controllers, or any high-performance power regulation systems, the MJD253-1G offers the efficiency, reliability, and quality that engineers and designers have come to expect from ON Semiconductor.

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