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MJD3055T4G

Part No MJD3055T4G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 10A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 10A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 8V @ 3.3A, 10A
Collector Cut-off Current(Max) 50μA
Typical Gain (hFE) (Min) 20 @ 4A, 4V
Maximum Power Dissipation 1.75W
Frequency - Transition 2MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 058923-MJD3055T4G
Ultra Librarian 3D Model Ultra Librarian MJD3055T4G CAD Model

Description

ON Semiconductor MJD3055T4G Transistor Overview

The MJD3055T4G is a high-performance NPN bipolar power transistor from ON Semiconductor that is designed to meet a wide range of application requirements. This device is particularly well-suited for power switching and amplifier applications thanks to its robust output and efficient power handling capabilities.

Key Features

  • Voltage and Current Ratings: The MJD3055T4G boasts a collector-emitter voltage (VCEO) of 60V and a collector current (IC) rating of up to 10A, making it suitable for moderate voltage and high current operations.
  • Power Dissipation: With a power dissipation of 75W, this transistor can handle significant levels of power, which is essential for demanding applications.
  • High DC Current Gain: The device offers a high DC current gain (hFE), which ensures efficient current amplification in circuits.
  • TO-252 (DPAK) Package: Enclosed in a compact TO-252 (DPAK) surface-mount package, the MJD3055T4G is designed for space-saving installations and is ideal for printed circuit boards where space is at a premium.
  • Pb-Free and RoHS Compliant: In line with modern environmental standards, the MJD3055T4G is lead-free and RoHS compliant, minimizing the environmental impact of electronic components.

Applications

The MJD3055T4G is versatile and can be used in a variety of applications, including:

  • Power regulators
  • Motor controls
  • Switching converters
  • Amplifier outputs
  • High-power switching circuits

Reliability and Performance

ON Semiconductor is known for its commitment to quality, and the MJD3055T4G is no exception. It is designed to offer reliable performance under a wide range of operating conditions. Its robustness makes it an excellent choice for both commercial and industrial applications where consistent operation is critical.

If you're looking for a reliable power transistor capable of delivering efficient performance with high current handling capabilities, the MJD3055T4G from ON Semiconductor is an excellent choice to consider for your next design project.

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3255 $50.4525
330+ $0.3049 $100.6170
510+ $0.2946 $150.2460
730+ $0.2740 $200.0200
950+ $0.2637 $250.5150
1,185+ $0.2534 $300.2790
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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