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MJD44H11RLG

Part No MJD44H11RLG
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 8A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 80V
Max Vce (sat) 1V @ 400mA, 8A
Collector Cut-off Current(Max) 1μA
Typical Gain (hFE) (Min) 40 @ 4A, 1V
Maximum Power Dissipation 1.75W
Frequency - Transition 85MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Win Source Part Number 003633-MJD44H11RLG
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management, Automotive, Signal Processing
Ultra Librarian 3D Model Ultra Librarian MJD44H11RLG CAD Model

Description

ON Semiconductor MJD44H11RLG NPN Power Transistor

The MJD44H11RLG is a robust NPN bipolar power transistor from ON Semiconductor, designed for general-purpose power amplification and switching applications. This device is a part of the MJD series, which is well-regarded for its high efficiency and reliability in various electronic circuits. It is housed in a DPAK (TO-252) surface-mount package, making it suitable for compact designs with space constraints.

Key Features

  • High Collector-Emitter Voltage: It offers a high VCEO of 80V, which means it can handle significant voltage across the collector and emitter without breaking down.
  • Collector Current: The transistor can sustain a continuous collector current (IC) of up to 8A, making it suitable for high-power applications.
  • Power Dissipation: With a power dissipation of 20W, this device can manage a fair amount of heat generated during operation without compromising its performance.
  • High DC Current Gain: The MJD44H11RLG features a high hFE (DC current gain) typically ranging from 30 to 240 at IC = 0.5A, providing efficient current amplification.
  • Fast Switching Times: It has fast switching times with a low collector-emitter saturation voltage, which enhances the performance in switching applications.
  • Operating Temperature Range: The operating junction temperature range is from -55°C to +150°C, allowing it to function in extreme conditions.

Applications

The MJD44H11RLG is versatile and can be used in a variety of applications including:

  • Linear and switching industrial equipment
  • Power regulators and converters
  • Motor control circuits
  • Audio amplifiers
  • High-power LED drivers
  • Automotive and consumer electronics

ON Semiconductor's commitment to quality ensures that the MJD44H11RLG transistor meets the stringent requirements of electronic devices, providing a reliable solution for designers looking to optimize their power circuits. Whether you're developing power supplies, motor controllers, or audio systems, this component offers a blend of performance and durability that can enhance the overall efficiency of your product.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.5929 $50.3965
185+ $0.5553 $102.7305
280+ $0.5366 $150.2480
405+ $0.4991 $202.1355
525+ $0.4803 $252.1575
655+ $0.4615 $302.2825
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 150,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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