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MJE15029G

Part No MJE15029G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 120V 8A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity PNP
Maximum Current Collector 8A
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 500mV @ 100mA, 1A
Collector Cut-off Current(Max) 100μA
Typical Gain (hFE) (Min) 20 @ 4A, 2V
Maximum Power Dissipation 50W
Frequency - Transition 30MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Win Source Part Number 003649-MJE15029G
Ultra Librarian 3D Model Ultra Librarian MJE15029G CAD Model

Description

ON Semiconductor MJE15029G Bipolar Transistor

The ON Semiconductor MJE15029G is a high-performance bipolar power transistor designed for use in a wide range of audio amplification and switching applications. This transistor is part of the MJE1502x series, which is renowned for its high-speed and high-power capabilities. It is specifically engineered to address the needs of designers looking for components with reliable performance in demanding environments.

The MJE15029G is a PNP transistor that is characterized by its high current and voltage handling capabilities. With a collector-emitter voltage (VCEO) of 120V and collector current (IC) of 8A, it can manage considerable power levels, making it suitable for medium-power linear and switching applications. It also features a collector dissipation (PC) of 50W at 25°C, which contributes to its ability to handle high power levels without overheating.

One of the key attributes of the MJE15029G is its high DC current gain (hFE), which ranges from 30 to 240 at IC=0.5A, providing a robust amplification factor for various applications. The device's transition frequency (fT) of 30MHz makes it an excellent choice for audio amplifiers, as it can easily handle the full range of audio frequencies without distortion.

Constructed with ON Semiconductor's innovative technologies, the MJE15029G ensures high reliability and performance. The device is housed in a TO-220 package, which is known for its robustness and ability to dissipate heat effectively. This package is also advantageous for its ease of mounting onto a heat sink, which is essential for maintaining thermal stability during operation.

For those looking to create a push-pull or complementary amplifier design, the MJE15029G can be paired with its NPN counterpart, the MJE15028G, to achieve optimal performance. This combination allows for the design of high-fidelity audio amplifiers that can deliver clean and powerful sound.

In summary, the ON Semiconductor MJE15029G is a versatile and durable PNP power transistor that offers high power handling, a high DC current gain, and excellent thermal stability. Its suitability for a range of applications, including audio amplification and power switching, makes it a valuable component for designers who require reliable and high-quality performance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1584 $58.2176
30+ $3.8900 $116.7000
47+ $3.7558 $176.5226
67+ $3.4876 $233.6692
87+ $3.3534 $291.7458
108+ $3.2194 $347.6952
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Availability: 4,010 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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