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MJE5731A

Part No MJE5731A
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 375V 1A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features Bipolar (BJT) Transistor PNP 375 V 1 A 10MHz 40 W Through Hole TO-220AB
Manufacturer ON Semiconductor
Package Tube
Part Status Obsolete
Operating Temperature Range -65°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220AB
Family Name MJE57
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 927193-MJE5731A
Ultra Librarian 3D Model Ultra Librarian MJE5731A CAD Model

Description

ON Semiconductor MJE5731A - High Voltage PNP Bipower Transistor

The MJE5731A from ON Semiconductor is a robust PNP bipolar power transistor designed for high-voltage applications. This device is particularly well-suited for line-operated applications such as lighting systems, power supplies, and other power control circuits. Its ability to handle significant voltage makes it an ideal choice for designers looking to manage power in electronic devices efficiently.

Constructed with ON Semiconductor's innovative technology, the MJE5731A features a collector-emitter voltage (VCEO) of -350V, which enables it to withstand substantial voltage stresses without succumbing to breakdowns. The collector current (IC) rating of -1A ensures that the transistor can handle a moderate amount of current, making it versatile for various circuit configurations.

The device boasts a power dissipation (PD) capability of 20W, which means it can manage a considerable amount of power without overheating. This power handling capacity is enhanced by its TO-220 package, which is well-known for its thermal efficiency, allowing for effective heat dissipation during operation. The MJE5731A's excellent thermal characteristics ensure reliability and longevity, even in demanding conditions.

ON Semiconductor has designed the MJE5731A with a high DC current gain (hFE), ranging typically from 30 to 240. This high gain allows for better amplification of the input signal, making the transistor suitable for amplification applications as well. Its fast switching speeds contribute to its efficiency, reducing transition losses and improving overall performance in switching applications.

For ease of integration into various circuit designs, the MJE5731A comes in an industry-standard TO-220 package. This package is not only durable but also makes the transistor easy to handle and mount on printed circuit boards. Moreover, the MJE5731A is Pb-free and RoHS compliant, making it an environmentally friendly choice for manufacturers who are conscious about reducing hazardous substances in their products.

In summary, the MJE5731A from ON Semiconductor is a reliable and versatile PNP bipolar power transistor that offers high-voltage capability, moderate current handling, and efficient power dissipation. Its robust design and thermal efficiency make it suitable for a wide range of applications, while its environmental compliance ensures it meets modern manufacturing standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3989 $59.9725
59+ $1.9681 $116.1179
91+ $1.9069 $173.5279
126+ $1.8457 $232.5582
162+ $1.7833 $288.8946
217+ $1.5997 $347.1349
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,270 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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