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MJH11022G

Part No MJH11022G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN DARL 250V 15A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Transistor Polarity NPN - Darlington
Maximum Current Collector 15A
VCEO Maximum Collector-Emitter Breakdown Voltage 250V
Max Vce (sat) 4V @ 150mA, 15A
Collector Cut-off Current(Max) 1mA
Typical Gain (hFE) (Min) 400 @ 10A, 5V
Maximum Power Dissipation 150W
Frequency - Transition 3MHz
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Win Source Part Number 058938-MJH11022G
Ultra Librarian 3D Model Ultra Librarian MJH11022G CAD Model

Description

ON Semiconductor MJH11022G – High Power NPN Silicon Transistor

The MJH11022G is a high-power NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a renowned leader in energy-efficient innovations. This transistor is specifically crafted to cater to applications requiring high-speed and high-power switching capabilities. It is a versatile component that can be utilized in a range of electronic circuits, including power amplifiers, switching regulators, and motor control systems.

With its robust design, the MJH11022G is capable of handling collector currents up to 15A continuously, making it suitable for demanding environments. The device operates with a collector-emitter voltage (VCEO) of 250V, providing ample headroom for a variety of high-voltage applications. The power dissipation is impressive at 200W, ensuring that the device can manage significant power levels without compromising its performance or reliability.

The MJH11022G transistor is housed in a TO-247 package, known for its excellent power handling and heat dissipation properties. This package allows for efficient thermal management, which is crucial in maintaining stability and extending the lifespan of the transistor under high-power conditions. The device also features a high DC current gain (hFE) range, which contributes to its efficient operation and minimizes power loss.

ON Semiconductor has equipped the MJH11022G with innovative features to enhance its performance. These include a fast-switching speed, which is essential for applications that demand rapid transitions between on and off states. Additionally, the transistor has a low collector-emitter saturation voltage, reducing power loss during the on-state and improving overall efficiency.

The MJH11022G is not only powerful but also reliable. It is designed to withstand harsh conditions and is characterized by its ruggedness. The component is also compliant with RoHS (Restriction of Hazardous Substances), which means it meets environmental standards by minimizing the use of hazardous materials.

In summary, the ON Semiconductor MJH11022G is an exceptional choice for designers and engineers looking to incorporate a high-power, high-performance NPN transistor into their electronic designs. Its combination of power handling, speed, thermal efficiency, and reliability makes it a valuable component for a wide array of power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $4.8200 $53.0200
23+ $4.5149 $103.8427
35+ $4.3624 $152.6840
50+ $4.0573 $202.8650
65+ $3.9048 $253.8120
80+ $3.7523 $300.1840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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