NRVHPD660T4G

Part No NRVHPD660T4G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description DIODE GEN PURP 600V 6A DPAK / Diode Standard 600 V 6A Surface Mount DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer onsemi
Packaging Reel - TR
Product Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Max) 600 V
Current - Average Rectified (Io) 6A
Voltage - Forward (Vf) (Max) @ If 3 V @ 6 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns
Current - Reverse Leakage @ Vr 30 µA @ 600 V
Mounting Surface Mount
Case / Package TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number NRVHPD660
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Other Part Number 2156-NRVHPD660T4G-OS,ONSONSNRVHPD660T4G
Standard Package 2,500
Win Source Part Number 1325150-NRVHPD660T4G

Description

ON Semiconductor NRVHPD660T4G - High-Efficiency Power Diode

The NRVHPD660T4G is a cutting-edge power diode from ON Semiconductor, designed to offer superior performance in a wide range of power conversion and management applications. This robust component is engineered to handle high surge currents and voltage transients, making it an ideal choice for high-reliability environments.

With its ultrafast recovery time, the NRVHPD660T4G minimizes power loss and improves the efficiency of the entire system. This characteristic is especially valuable in applications such as switched-mode power supplies, power inverters, and freewheeling diodes in motor control circuits, where speed and efficiency are critical.

Key features of the NRVHPD660T4G include:

  • High Surge Capacity: The diode is capable of withstanding significant surge currents without degradation, ensuring a long operational life and reliability under stressful conditions.
  • Low Forward Voltage Drop: The device exhibits a low forward voltage drop, which translates into reduced power loss and enhanced system efficiency, particularly important in battery-powered applications.
  • Ultrafast Recovery Time: Its ultrafast recovery time reduces switching losses and noise, contributing to the overall performance and efficiency of the power circuit.
  • High-Temperature Operation: The NRVHPD660T4G is designed to perform reliably in high-temperature environments, making it suitable for industrial and automotive applications where thermal conditions can be challenging.
  • Robust Packaging: Packaged in a Pb-free, Halogen-free, and RoHS compliant package, it meets the environmental standards of today's electronic industry and ensures compatibility with modern manufacturing processes.

The NRVHPD660T4G diode is provided in an industry-standard TO-220 package, which allows for easy integration into various circuit designs. Whether you're designing power supplies, motor controllers, or any other system requiring efficient power diode functionality, the NRVHPD660T4G from ON Semiconductor is a reliable and performance-oriented choice that can help elevate your designs to the next level.

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Pricing & Ordering (USD)

Quantity Unit Price Ext. Price
18+ $2.8260 $50.8680
44+ $2.3190 $102.0360
67+ $2.2470 $150.5490
92+ $2.1740 $200.0080
119+ $2.1020 $250.1380
160+ $1.8840 $301.4400
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 99,400 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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