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IRFR9110TRPBF

Part No IRFR9110TRPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 3.1A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 8.7nC @ 10V
Max Input Capacitance 200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 1.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 114793-IRFR9110TRPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFR9110TRPBF CAD Model

Description

The Vishay IRFR9110TRPBF is a P-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current of 3.1A at 25°C.

  • Gate-Source Threshold Voltage: 4V at 250μA
  • Max Gate Charge: 8.7nC at 10V
  • Max Rds On @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
  • Power Dissipation: 2.5W (Ta), 25W (Tc)
  • Package: D-Pak case
  • Mounting: suitable for surface mount technology
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.6751 $50.6325
185+ $0.5539 $102.4715
280+ $0.5366 $150.2480
390+ $0.5193 $202.5270
500+ $0.5020 $251.0000
670+ $0.4501 $301.5670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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