The IXYS IXFK48N60P is a MOSFET featuring an N-channel transistor polarity.

• Application: It is designed for use in discrete semiconductor products, with a drive voltage of 10V, and a maximum power dissipation of 830W.
• Vds: The device has a drain-source breakdown voltage of 600V.
• Id: It has a continuous drain current of 48A.
• Rds On: It has a maximum on-state resistance of 135mOhm @ 500mA and 10V.
• Vgs(th): The gate-source voltage threshold is 5V @ 8mA.
• Qg: The gate charge is 150nC @ 10V.
• Package: The device is packaged in a TO-264AA (IXFK) package and is mounted through a hole.
• Operating Temperature: It has an operating temperature range of -55°C to 150°C.