The MMBR5179LT1G from ON Semiconductor is a high-performance bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This device is a part of ON Semiconductor's extensive range of semiconductor components known for their reliability and efficiency.
Key Features
- Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 15V
- Current - Collector (Ic) (Max): 50mA
- Power - Max: 225mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-3 (TO-236)
- Supplier Device Package: SOT-23-3
Product Description
The MMBR5179LT1G is a versatile PNP transistor that offers a collector-emitter breakdown voltage of 15V and a collector current capability of up to 50mA, making it suitable for a wide range of applications. With a power dissipation of 225mW, this device can handle moderate power levels while maintaining a compact footprint thanks to its SOT-23-3 package.
One of the notable characteristics of the MMBR5179LT1G is its high current gain, with a minimum hFE of 100 at 1mA and 5V. This feature ensures substantial amplification capabilities for signals in various electronic circuits. Additionally, with a transition frequency of 100MHz, the MMBR5179LT1G is capable of working in high-frequency applications, which is essential for RF and other high-speed signal processing tasks.
The operating temperature range of -55°C to 150°C allows the MMBR5179LT1G transistor to perform reliably in extreme conditions, making it suitable for industrial and automotive applications that require robust performance.
ON Semiconductor's commitment to quality is evident in the MMBR5179LT1G, which is designed and manufactured to meet the stringent requirements of the electronics industry. Whether you're designing an amplifier circuit or looking for a switch for your digital applications, the MMBR5179LT1G offers the performance and reliability that engineers have come to expect from ON Semiconductor.