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MMBR911LT1

Part No MMBR911LT1
Manufacturer ON Semiconductor
Catalog HOT - SALES and EOL Components (M)
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer ON Semiconductor
Win Source Part Number 235214-MMBR911LT1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian MMBR911LT1 CAD Model

Description

ON Semiconductor MMBR911LT1 High-Frequency Transistor

The MMBR911LT1 from ON Semiconductor is a cutting-edge, high-frequency NPN bipolar junction transistor (BJT) designed for use in RF amplification and oscillation applications. This compact and efficient transistor is a perfect fit for modern electronic devices where space is at a premium and performance is non-negotiable.

Key Features

  • High Transition Frequency (fT): The MMBR911LT1 boasts a high transition frequency, making it suitable for VHF and UHF applications.
  • Low Noise Figure: With its low noise operation, it ensures clear signal amplification, which is critical in communication devices.
  • High Gain Bandwidth Product: This transistor provides a high gain bandwidth product, enabling it to maintain gain over a wide range of frequencies.
  • Surface-Mount Package: The SOT-23 package is ideal for automated assembly processes and helps in reducing the overall size of the circuit boards.

Applications

The MMBR911LT1 is designed for a variety of applications, including but not limited to:

  • RF amplifiers
  • Oscillators
  • Mixers
  • Low noise amplifiers in telecommunication devices
  • Portable and consumer electronics
  • Industrial and medical equipment

Technical Specifications

Parameter Value
Collector-Emitter Voltage (VCEO) 15 V
Collector-Base Voltage (VCBO) 30 V
Emitter-Base Voltage (VEBO) 3.0 V
Collector Current (IC) 50 mA
DC Current Gain (hFE) 30 to 300
Transition Frequency (fT) 8.0 GHz

Overall, ON Semiconductor's MMBR911LT1 is an exceptional choice for designers looking for a high-performance, high-frequency transistor that won't take up much space on their PCBs.

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