ON Semiconductor MMBT3904T1G NPN Bipolar Transistor

The MMBT3904T1G from ON Semiconductor is a versatile and high-quality NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This small-signal transistor is a critical component for a wide array of electronic circuits, offering excellent performance in a compact SOT-23 surface-mount package.

Key Features

• Device Type: NPN Bipolar Transistor
• Package: SOT-23 Surface-Mount
• Collector-Emitter Voltage (V_CEO): 40V
• Collector-Base Voltage (V_CBO): 60V
• Emitter-Base Voltage (V_EBO): 6V
• Collector Current (I_C): 200mA
• Power Dissipation (P_D): 225mW
• DC Current Gain (h_FE): 100 to 300 at 10mA
• High Transition Frequency: f_T of 300MHz

The MMBT3904T1G is known for its reliability and efficiency, making it an ideal choice for a multitude of electronic applications. Its high current gain and low saturation voltage ensure that it can efficiently control the flow of electrical current in a circuit without significant losses.

Applications

This transistor can be commonly found in:

• Signal amplification circuits
• Switching circuits
• Linear amplification
• Power management
• Motor control
• Consumer electronics
• Telecommunication systems

ON Semiconductor's commitment to quality is evident in the MMBT3904T1G, which is manufactured to stringent standards, ensuring consistent performance and durability. The compact size of the SOT-23 package makes it ideal for space-constrained applications, providing designers with a flexible and efficient solution for their circuit design challenges.

Whether you are developing a new project or replacing a component in an existing circuit, the MMBT3904T1G NPN transistor is a reliable choice that will help you achieve the desired performance and stability in your electronic designs.