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MMBT4401LT3G

Part No MMBT4401LT3G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS NPN 40V 0.6A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min) 100 @ 150mA, 1V
Maximum Power Dissipation 300mW
Frequency - Transition 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 115422-MMBT4401LT3G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBT4401LT3G CAD Model

Description

ON Semiconductor MMBT4401LT3G NPN Bipolar Transistor

The MMBT4401LT3G from ON Semiconductor is a high-performance NPN bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is housed in a compact SOT-23 package, making it ideal for space-constrained designs. The MMBT4401LT3G is characterized by its high current gain and low voltage operation, providing efficient performance in switching and amplification tasks.

Key Features

  • Transistor Type: NPN - This allows for efficient switching and amplification of electrical signals.
  • Current - Collector (Ic) (Max): 600mA - The transistor can handle a maximum collector current of 600mA, making it suitable for moderate power applications.
  • Voltage - Collector Emitter Breakdown (Max): 40V - It can withstand up to 40V across the collector-emitter junction, providing a good margin for various circuit designs.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V - The transistor has a minimum DC current gain of 100 at 10mA and 1V, ensuring amplification of the input signal.
  • Power - Max: 225mW - It can dissipate a maximum power of 225mW, which is suitable for a wide range of low to medium power applications.
  • Frequency - Transition: 300MHz - The transition frequency of 300MHz makes this transistor suitable for high-frequency applications.
  • Operating Temperature: -55°C to +150°C - The device can operate within a wide temperature range, ensuring reliability under various environmental conditions.
  • Mounting Type: Surface Mount - The SOT-23 package allows for surface mounting, making it easy to integrate into PCB designs.

Applications

The MMBT4401LT3G is ideal for a variety of applications, including but not limited to:

  • Switching and linear amplification
  • Driver stages in audio amplifiers
  • Signal processing
  • Power management functions
  • Control systems

With its robust performance and compact form factor, the MMBT4401LT3G from ON Semiconductor is a reliable choice for designers looking to optimize their electronic circuits with a high-quality NPN transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
750+ $0.0669 $50.1750
1,825+ $0.0549 $100.1925
2,820+ $0.0532 $150.0240
3,885+ $0.0515 $200.0775
5,035+ $0.0497 $250.2395
6,730+ $0.0446 $300.1580
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 947,180 pieces
MOQ: 750 pcs
Order Increment : 1 pcs
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