The ON Semiconductor BC847BDW1T3G is a high-performance, dual NPN bipolar (BJT) transistor designed for use in a wide range of electronic applications. This small signal transistor is notable for its low voltage operation and is commonly utilized in general-purpose amplification and switching tasks.

Key Features

• Device Type: Dual NPN Bipolar Junction Transistor (BJT)
• Package: SOT-363, a compact surface-mount package that is ideal for space-constrained applications.
• Configuration: Dual common emitter configuration, allowing for use in differential or push-pull applications.
• Collector-Emitter Voltage (Vceo): 45V, providing sufficient headroom for many low to medium voltage applications.
• Collector Current (Ic): 100mA, suitable for a range of signal amplification tasks.
• DC Current Gain (hFE): High hFE (gain) at 420, ensuring efficient current amplification.
• Transition Frequency (fT): 100 MHz, indicating good high-frequency performance for a BJT.
• Low Noise: Exhibits low noise figures, making it suitable for audio and other sensitive applications.
• RoHS Compliant: Meets the requirements of the Restriction of Hazardous Substances Directive, making it environmentally friendly.

Applications

The BC847BDW1T3G is versatile and can be used in various applications, including:

• General-purpose amplification
• Switching applications
• Audio amplifiers
• Signal processing
• Driver stages in hi-fi amplifiers and television circuits
• Multiple stage amplifiers

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the BC847BDW1T3G is no exception. It is manufactured to high standards to ensure consistent performance and reliability for the end-user. Whether you are designing a new circuit or replacing an existing component, the BC847BDW1T3G offers the quality and performance you can trust.

For detailed specifications, application notes, and additional information, engineers and purchasers can refer to the official ON Semiconductor datasheets and product guides.