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MMBT4403LT1G

Part No MMBT4403LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 40V 0.6A SOT23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 750mV @ 50mA, 500mA
Typical Gain (hFE) (Min) 100 @ 150mA, 2V
Maximum Power Dissipation 300mW
Frequency - Transition 200MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 023767-MMBT4403LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MMBT4403LT1G CAD Model

Description

ON Semiconductor MMBT4403LT1G PNP Transistor

The ON Semiconductor MMBT4403LT1G is a high-performance PNP bipolar junction transistor (BJT) designed for use in a wide range of electronic applications. This versatile transistor is well-suited for amplification and switching applications, offering a blend of reliable performance and efficiency in a compact SOT-23 package.

With a collector-emitter voltage (VCEO) of -40V and a collector current capability of up to -600mA, the MMBT4403LT1G is capable of handling moderate power levels while maintaining low saturation voltages, making it an excellent choice for power management in portable devices. Its high current gain bandwidth product (fT) ensures good performance in amplification circuits, particularly in audio and signal processing applications where fidelity and linearity are crucial.

The device features a continuous collector current (IC) of -600mA, which allows it to drive loads with ease, and a power dissipation of 225mW, which helps in maintaining thermal stability during operation. Its PNP configuration makes it suitable for use in push-pull stages and complementary circuits when paired with an NPN transistor, providing designers with flexibility in circuit design.

The MMBT4403LT1G also offers a low collector-emitter saturation voltage, which reduces power loss and improves efficiency, particularly in saturation-driven applications. This characteristic, combined with fast switching times, makes it an ideal choice for use in switching regulators, inverters, and other power conversion applications.

ON Semiconductor's commitment to quality ensures that the MMBT4403LT1G meets stringent standards for reliability and performance. The device is also RoHS compliant, minimizing the environmental impact by excluding hazardous substances in its construction. Whether for use in consumer electronics, industrial control systems, or communication devices, the MMBT4403LT1G is a dependable transistor that offers a balance of power and precision for engineers and designers.

In summary, the ON Semiconductor MMBT4403LT1G is a high-quality PNP transistor that provides excellent performance for a variety of electronic applications, all in a small surface-mount package, making it a valuable component in modern electronic design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,075+ $0.0241 $50.0075
4,445+ $0.0225 $100.0125
6,885+ $0.0218 $150.0930
9,855+ $0.0203 $200.0565
12,825+ $0.0195 $250.0875
16,045+ $0.0187 $300.0415
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990,000 pieces
MOQ: 2075 pcs
Order Increment : 1 pcs
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