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MMBTA733LT1G

Part No MMBTA733LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Manufacturer ON Semiconductor
Win Source Part Number 322800-MMBTA733LT1G
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMBTA733LT1G CAD Model

Description

The MMBTA733LT1G is a high-performance PNP bipolar transistor from ON Semiconductor, a leading provider of semiconductor-based solutions. This versatile transistor is designed to deliver efficient amplification and switching functionalities, making it suitable for a wide range of electronic applications.

Key Features

  • Transistor Type: PNP - This indicates that the MMBTA733LT1G is designed to control the flow of holes as charge carriers, which is typical for PNP transistors.
  • Package / Case: SOT-23-3 - The device comes in a small SOT-23-3 package, which is ideal for space-constrained applications.
  • Collector-Emitter Voltage (VCEO): 40V - This parameter specifies the maximum voltage that can be applied across the collector-emitter terminals without causing damage to the transistor.
  • Collector-Base Voltage (VCBO): 40V - This value represents the maximum voltage that can be sustained by the collector-base junction, ensuring reliable operation within these limits.
  • Emitter-Base Voltage (VEBO): 5V - The maximum voltage that the emitter-base junction can tolerate.
  • Collector Current - Continuous (IC): 100mA - The MMBTA733LT1G can handle a continuous collector current up to 100mA, making it suitable for moderate power applications.
  • Power Dissipation (Pd): 225mW - This value indicates the amount of power the transistor can dissipate without exceeding its maximum operating temperature.
  • DC Current Gain (hFE): 100 to 600 - The transistor provides a DC current gain in this range, which is a measure of the transistor's ability to amplify the input signal.
  • Operating Temperature: -55°C to +150°C - The device is designed to operate reliably across a wide temperature range, making it suitable for various environmental conditions.

Applications

The MMBTA733LT1G is commonly used in signal amplification circuits, switching applications, and any other scenario where a PNP transistor is required. Its small size and high performance make it an excellent choice for portable devices, power management systems, and general-purpose amplification tasks.

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMBTA733LT1G is no exception. It is manufactured to meet the highest industry standards, ensuring reliability and performance for critical electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
880+ $0.0658 $57.9040
2,130+ $0.0543 $115.6590
3,335+ $0.0520 $173.4200
4,550+ $0.0508 $231.1400
5,815+ $0.0497 $289.0055
7,895+ $0.0439 $346.5905
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 880 pcs
Order Increment : 1 pcs
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