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MMDF2P02ER2G

Part No MMDF2P02ER2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 25V 2.5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 250 mOhm @ 2A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 475pF @ 16V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Win Source Part Number 059212-MMDF2P02ER2G
Ultra Librarian 3D Model Ultra Librarian MMDF2P02ER2G CAD Model

Description

ON Semiconductor MMDF2P02ER2G - P-Channel Power MOSFET

The ON Semiconductor MMDF2P02ER2G is a high-performance P-Channel Power MOSFET designed to cater to a wide range of power management applications. This MOSFET is part of ON Semiconductor's advanced PowerTrench® technology, offering low on-resistance and a high switching performance which is crucial for efficient power regulation and conversion in electronic circuits.

The MMDF2P02ER2G is encapsulated in a compact SOIC-8 package, which not only saves space on the PCB but also ensures a lower thermal resistance compared to larger packages. This feature makes the MMDF2P02ER2G an excellent choice for space-constrained applications where thermal management is a concern.

Key specifications of the MMDF2P02ER2G include a drain-source voltage (VDS) of -20V, a continuous drain current (ID) of -3.7A, and a power dissipation (PD) of 2.0W. These specifications are suitable for a variety of applications, from power supply circuits to motor control systems.

The device also boasts a low gate threshold voltage (VGS(th)), which allows for operation at lower gate voltages, reducing power consumption and making it compatible with low-voltage logic levels. This feature is particularly beneficial in battery-powered devices where energy efficiency is paramount.

For protection and reliability, the MMDF2P02ER2G includes features such as built-in zener diodes for Electrostatic Discharge (ESD) protection. This ensures the longevity of the product even in environments where ESD events are likely to occur.

Overall, the MMDF2P02ER2G from ON Semiconductor is a versatile and reliable component for designers looking to implement P-Channel MOSFETs in their power management solutions. Its combination of low on-resistance, high switching speed, and compact footprint makes it a valuable addition to any electronic design aiming for efficiency and space-saving.

Whether you are developing power supplies, DC-DC converters, or any other application requiring a high-performance P-Channel MOSFET, the MMDF2P02ER2G offers the performance and features necessary to meet your design requirements.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.8602 $51.6120
145+ $0.7059 $102.3555
220+ $0.6838 $150.4360
305+ $0.6617 $201.8185
395+ $0.6397 $252.6815
525+ $0.5735 $301.0875
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,770 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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