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MMJT350T1G

Part No MMJT350T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 300V 0.5A SOT-223
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP
Maximum Current Collector 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage 300V
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 30 @ 50mA, 10V
Maximum Power Dissipation 650mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-223
Win Source Part Number 1078389-MMJT350T1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian MMJT350T1G CAD Model

Description

ON Semiconductor MMJT350T1G: High-Performance Bipolar Transistor

The MMJT350T1G is a high-voltage, high-performance NPN bipolar junction transistor (BJT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This device is well-suited for a range of electronic applications, offering a blend of robust performance characteristics that make it a versatile component in various circuits.

Key Features

  • Voltage and Current Ratings: With a collector-emitter voltage (VCEO) of 350V, the MMJT350T1G can handle high voltage requirements, making it suitable for power supply and lighting applications. Its collector current (IC) rating of 500 mA allows it to drive moderate loads efficiently.
  • Power Dissipation: The device has a power dissipation capability of 625 mW, which ensures reliable operation even under higher power conditions. This feature helps in maintaining stability and longevity of the transistor in your circuit designs.
  • High Gain Bandwidth Product: It offers a transition frequency (fT) of 50 MHz, which indicates a good frequency response. This is beneficial for applications requiring fast switching and amplification of high-frequency signals.
  • Thermal Performance: The MMJT350T1G comes in a SOT-23 package, known for its excellent thermal performance, which aids in heat dissipation and allows for a more compact design footprint.
  • Robustness: ON Semiconductor has designed this transistor to be robust against thermal and electrical stresses, thereby ensuring reliability and a longer operational life for the device.

Applications

The MMJT350T1G transistor can be utilized in a wide array of applications, including:

  • Switching regulators
  • Power management functions
  • DC-DC converters
  • Motor control circuits
  • Audio amplifiers
  • Signal amplification tasks

In conclusion, the ON Semiconductor MMJT350T1G NPN transistor is a reliable and efficient solution for designers who need a high-voltage component capable of handling moderate power levels with ease. Its small form factor, combined with its electrical robustness, makes it an excellent choice for both new designs and as a replacement in existing applications where performance and space savings are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4418 $59.6430
320+ $0.3626 $116.0320
495+ $0.3513 $173.8935
680+ $0.3400 $231.2000
880+ $0.3286 $289.1680
1,180+ $0.2947 $347.7460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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