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MMUN2113LT1G

Part No MMUN2113LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 0.4W SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 036043-MMUN2113LT1G
Ultra Librarian 3D Model Ultra Librarian MMUN2113LT1G CAD Model

Description

ON Semiconductor MMUN2113LT1G Bipolar Transistor

The MMUN2113LT1G is a high-performance bipolar (BJT) transistor product from ON Semiconductor, designed to offer exceptional switching and amplification capabilities for a wide range of electronic applications. This PNP transistor is particularly noted for its low V<sub>CE(sat) which makes it suitable for low-power operations and battery-powered devices.

Constructed with ON Semiconductor's innovative technologies, the MMUN2113LT1G ensures reliability and efficiency. It is commonly used in signal processing, power management, and control systems, where precise current control is paramount. The transistor is also a popular choice for designers looking to create compact circuits due to its small surface-mounted SOT-23 package.

Key Features:

  • Type: PNP Bipolar Transistor
  • Package: SOT-23 surface-mounted package for a compact footprint
  • Collector-Emitter Voltage (V<sub>CEO): 50V, providing a good range for various applications
  • Collector Current (I<sub>C): Up to 100 mA, ideal for moderate current requirements
  • Power Dissipation (P<sub>D): 225 mW, ensuring efficient operation without overheating
  • DC Current Gain (h<sub>FE): High, which allows for a significant amplification of the input signal
  • Low Saturation Voltage: Minimizes power loss and improves efficiency during operation
  • RoHS Compliant: Meets environmental standards by avoiding the use of hazardous substances

The MMUN2113LT1G's performance is supported by its robust thermal characteristics, enabling it to operate effectively over a wide temperature range. This, combined with its low saturation voltage, ensures that the device is not only energy-efficient but also maintains its performance under varying environmental conditions.

ON Semiconductor's commitment to quality is evident in the MMUN2113LT1G, making it a dependable choice for manufacturers and hobbyists alike. Whether you're designing sophisticated industrial systems or simple DIY projects, this transistor is engineered to deliver consistent, high-quality performance. Its compliance with RoHS directives also ensures that it is a sustainable option for environmentally conscious applications.

Overall, the MMUN2113LT1G from ON Semiconductor stands as a testament to the company's dedication to providing advanced electronic components that meet the evolving needs of modern circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,810+ $0.0199 $55.9190
6,805+ $0.0165 $112.2825
10,565+ $0.0159 $167.9835
14,600+ $0.0153 $223.3800
18,800+ $0.0149 $280.1200
25,215+ $0.0133 $335.3595
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Availability: 24,000 pieces
MOQ: 2810 pcs
Order Increment : 1 pcs
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