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MMUN2114LT1G

Part No MMUN2114LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 300μA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 024085-MMUN2114LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian MMUN2114LT1G CAD Model

Description

ON Semiconductor MMUN2114LT1G Bipolar Transistor

The MMUN2114LT1G is a high-performance bipolar (BJT) transistor from ON Semiconductor, a leading manufacturer in the semiconductor industry. This device is designed with state-of-the-art technology for optimal performance in a variety of applications. Its small surface-mount package makes it suitable for use in space-constrained situations, providing designers with a flexible and reliable transistor option.

The MMUN2114LT1G is a PNP transistor, which means it is designed to allow current flow when a small amount of negative voltage is applied to its base terminal. This type of transistor is commonly used for amplification and switching purposes in electronic circuits. It is particularly well-suited for applications that require low-power consumption and high voltage operation.

Key Features:

  • Voltage Ratings: The MMUN2114LT1G has a collector-emitter voltage (VCEO) rating of 50V, making it suitable for moderate voltage applications.
  • Current Capacity: It can handle continuous collector currents (IC) up to 100mA, which is adequate for a wide range of signal processing tasks.
  • Gain: The transistor boasts a high current gain (hFE), typically around 100, which is beneficial for amplifying weak signals without significant power loss.
  • Package: It comes in a SOT-23 package, a compact surface-mount package that is widely used in the industry for its small size and ease of integration into various circuit designs.
  • RoHS Compliant: The MMUN2114LT1G is RoHS compliant, ensuring that it meets the latest environmental standards and is free from hazardous substances.

With its robust performance characteristics, the MMUN2114LT1G is an excellent choice for designers looking to incorporate a reliable PNP transistor into their electronic designs. Whether it's for amplifying audio signals, driving small motors, or switching loads in a power management system, this ON Semiconductor product is designed to deliver efficiency and stability.

Overall, the MMUN2114LT1G is a testament to ON Semiconductor's commitment to providing high-quality components that meet the demanding requirements of modern electronics. Its combination of high voltage operation, current handling capability, and compact form factor make it a versatile component for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
505+ $0.0999 $50.4495
1,220+ $0.0820 $100.0400
1,890+ $0.0794 $150.0660
2,605+ $0.0769 $200.3245
3,365+ $0.0743 $250.0195
4,505+ $0.0666 $300.0330
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 505 pcs
Order Increment : 1 pcs
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