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MMUN2116LT1G

Part No MMUN2116LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity PNP - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Typical Gain (hFE) (Min) 160 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 098693-MMUN2116LT1G
Ultra Librarian 3D Model Ultra Librarian MMUN2116LT1G CAD Model

Description

Product Overview: MMUN2116LT1G

The MMUN2116LT1G is a high-performance PNP bipolar transistor designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This semiconductor device is engineered to meet the demanding requirements of modern electronic circuits, offering a blend of high-speed switching, low saturation voltage, and energy efficiency, making it an ideal choice for a wide range of applications.

Key Features

  • Transistor Type: The MMUN2116LT1G is a PNP (Positive-Negative-Positive) bipolar junction transistor (BJT), which is commonly used for amplification and switching purposes.
  • Configuration: It comes in a single configuration, providing designers with a straightforward solution for their circuit designs.
  • High Current Gain: This transistor offers a high current gain (hFE), which ensures that a small input current can be amplified to a larger output current, making it highly efficient for signal processing.
  • Low Saturation Voltage: The device features a low V<sub>CE(sat) voltage, which reduces power loss and enhances overall circuit efficiency, especially in saturation mode applications.
  • Power Dissipation: With a moderate power dissipation capacity, the MMUN2116LT1G can handle a reasonable amount of power within its package limits, ensuring reliable performance in various conditions.
  • Package: The transistor is available in a SOT-23 package, which is a small, surface-mount package that is suitable for use in compact designs with limited PCB space.

Applications

The versatility of the MMUN2116LT1G allows it to be used in a multitude of applications, including but not limited to:

  • Signal amplification in audio and video equipment
  • Switching circuits in consumer electronics
  • Power management in portable devices
  • Driver stages in amplifiers
  • Control systems in automotive and industrial sectors

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The MMUN2116LT1G is no exception, as it undergoes rigorous testing and quality control measures to ensure that it performs to specifications under various conditions. With ON Semiconductor's reputation for durable and dependable components, you can trust the MMUN2116LT1G to be a reliable part of your electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,150+ $0.0233 $50.0950
5,210+ $0.0192 $100.0320
8,065+ $0.0186 $150.0090
11,115+ $0.0180 $200.0700
14,370+ $0.0174 $250.0380
19,235+ $0.0156 $300.0660
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,572 pieces
MOQ: 2150 pcs
Order Increment : 1 pcs
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