The MMUN2137LT1G from ON Semiconductor is a high-performance bipolar (BJT) transistor, designed for use in a wide array of electronic applications. This device is part of ON Semiconductor's innovative transistor portfolio that offers superior power handling and energy efficiency.

Key Features

• Device Type: PNP Bipolar Transistor
• Package: SOT-23 (TO-236) Surface-Mount
• Configuration: Single
• Collector-Emitter Voltage (VCEO): 50V
• Collector-Base Voltage (VCBO): 50V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 100mA
• Power Dissipation (Pd): 225mW
• DC Current Gain (hFE): 80 to 320 at 10mA VCE
• Operating and Storage Junction Temperature Range: -55°C to +150°C

Applications

The MMUN2137LT1G is ideal for a range of applications due to its compact size and robust performance. It is commonly used in:

• Signal Processing
• Amplification and Switching
• Power Management
• Load Drivers
• Voltage Regulation
• Consumer Electronics
• Automotive Modules

Quality and Reliability

ON Semiconductor is known for its commitment to quality, and the MMUN2137LT1G is no exception. It is manufactured to meet the highest industry standards for performance and reliability. This transistor is RoHS compliant, ensuring that it meets global environmental standards and is free from hazardous substances.

Conclusion

The MMUN2137LT1G PNP Bipolar Transistor from ON Semiconductor is a versatile and reliable component suitable for a broad spectrum of electronic circuits. Its small form factor, combined with high voltage and current capabilities, make it an excellent choice for designers looking to optimize their products for performance and energy efficiency. Whether for consumer electronics, automotive applications, or industrial systems, the MMUN2137LT1G stands as a testament to ON Semiconductor's dedication to innovation and quality.