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MMUN2211LT1

Part No MMUN2211LT1
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS BRT NPN 100MA 50V SOT23 / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236)
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Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Mfr ON Semiconductor
Package Cut Tape (CT)
Product Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Power - Max 246 mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236)
Base Product Number MMUN2211
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 885485-MMUN2211LT1
Ultra Librarian 3D Model Ultra Librarian MMUN2211LT1 CAD Model

Description

ON Semiconductor MMUN2211LT1 Bipolar Transistor

The MMUN2211LT1 from ON Semiconductor is a high-performance bipolar (BJT) transistor that offers a blend of efficiency and reliability for a wide range of electronic applications. This PNP transistor is a versatile component designed to cater to the needs of modern electronic circuits, providing excellent amplification and switching capabilities.

Constructed with ON Semiconductor's innovative technologies, the MMUN2211LT1 features a robust design that ensures long-term stability and performance. The device is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained applications where board real estate is at a premium. This small footprint does not compromise its electrical capabilities, making it a preferred choice for designers looking to optimize their circuit designs.

The MMUN2211LT1 boasts a collector-emitter voltage (VCEO) of -50V and a collector-base voltage (VCBO) of -60V, which enables it to handle moderate power levels while maintaining a high degree of precision. With a continuous collector current (IC) of -100mA, this transistor is capable of driving loads in a variety of configurations without sacrificing efficiency or performance.

One of the key features of the MMUN2211LT1 is its low saturation voltage, which minimizes power loss and helps in achieving higher energy efficiency in the end application. This characteristic is particularly beneficial in battery-operated devices where power conservation is critical. Additionally, the device offers excellent current gain characteristics with a high hFE, ensuring effective current amplification in analog signal processing tasks.

The MMUN2211LT1 is widely used in general-purpose switching and amplification applications, including but not limited to signal processing, power management, and control systems. Its reliability and performance make it suitable for consumer electronics, industrial automation, and automotive sectors, among others.

ON Semiconductor's commitment to quality ensures that the MMUN2211LT1 meets the stringent requirements of the electronics industry, providing a reliable and cost-effective solution for circuit designers. With its impressive specifications and versatile nature, the MMUN2211LT1 is an essential component for any electronic project that demands high performance and space efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,230+ $0.0155 $50.0650
6,900+ $0.0145 $100.0500
10,715+ $0.0140 $150.0100
15,385+ $0.0130 $200.0050
19,845+ $0.0126 $250.0470
24,795+ $0.0121 $300.0195
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 990,000 pieces
MOQ: 3230 pcs
Order Increment : 1 pcs
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