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MMUN2232LT1G

Part No MMUN2232LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 246MW SOT23-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 4.7k
Typical Gain (hFE) (Min) 15 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 041744-MMUN2232LT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2232LT1G CAD Model

Description

Product Overview: MMUN2232LT1G

The MMUN2232LT1G, manufactured by ON Semiconductor, is a high-performance, dual NPN bipolar transistor designed to deliver efficient performance for a wide range of applications. This device comes in a compact SOT-23 package, making it ideal for space-constrained applications where small size and low power consumption are critical.

Key Features

  • Transistor Type: The MMUN2232LT1G is a dual NPN transistor, which means it consists of two NPN bipolar junction transistors in a single package. This configuration allows for simplified circuit design and reduced component count.
  • Package: It is housed in a SOT-23 surface-mount package, which is widely used in the industry due to its small footprint and ease of integration into various electronic assemblies.
  • Voltage Ratings: The device is capable of handling collector-emitter voltages up to 50V, making it suitable for moderate voltage applications.
  • Current Capacity: With a continuous collector current rating of 100 mA, the MMUN2232LT1G can drive small loads directly or serve as a pre-driver for larger power transistors.
  • Power Dissipation: It has a power dissipation of 225 mW, which allows for reasonable thermal performance in typical circuit configurations.
  • Gain Bandwidth Product: The device features a gain bandwidth product (fT) of 250 MHz, providing sufficient frequency response for a variety of analog and digital applications.

Applications

The MMUN2232LT1G is versatile and can be used in numerous applications, including but not limited to:

  • Signal processing
  • Amplification stages
  • Switching circuits
  • Audio amplifiers
  • Driver stages in audio and signal processing
  • Power management solutions
  • Control systems

Quality and Reliability

ON Semiconductor is committed to providing high-quality products. The MMUN2232LT1G is built to meet stringent quality standards, ensuring reliability and performance in demanding environments. Its robust construction and careful design make it a preferred choice for engineers and designers looking for a reliable transistor solution.

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Pricing & Ordering

Quantity Unit Price Ext. Price
2,120+ $0.0236 $50.0320
4,525+ $0.0221 $100.0025
7,010+ $0.0214 $150.0140
10,055+ $0.0199 $200.0945
13,025+ $0.0192 $250.0800
16,305+ $0.0184 $300.0120
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 160,000 pieces
MOQ: 2120 pcs
Order Increment : 1 pcs
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