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MMUN2235LT1G

Part No MMUN2235LT1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 0.246W SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 5mA, 10V
Max Vce (sat) 250mV @ 1mA, 10mA
Collector Cut-off Current(Max) 500nA
Maximum Power Dissipation 246mW
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Win Source Part Number 1078500-MMUN2235LT1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian MMUN2235LT1G CAD Model

Description

ON Semiconductor MMUN2235LT1G: Bipolar Transistor

The MMUN2235LT1G is a state-of-the-art bipolar transistor developed by ON Semiconductor, a leader in energy-efficient innovations. This high-performance transistor is designed to meet the requirements of a wide range of electronic applications, offering reliability and efficiency in a compact package.

Key Features

  • Device Type: PNP Bipolar Transistor
  • Configuration: Single
  • Collector-Emitter Voltage (VCEO): 50V
  • Collector-Base Voltage (VCBO): 60V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 100mA
  • Power Dissipation: 225mW
  • DC Current Gain (hFE): 100 to 300 at 10mA
  • Operating and Storage Junction Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23-3
  • Mounting Type: Surface Mount
  • RoHS: Compliant

Product Description

The MMUN2235LT1G from ON Semiconductor is a PNP bipolar junction transistor (BJT) that excels in applications requiring a device with high-speed switching capabilities and low saturation voltage. This transistor is especially suitable for use in linear amplification and switching applications.

With a collector-emitter voltage rating of 50V and collector current rating of 100mA, this transistor can handle moderate power applications with ease. The device offers a high DC current gain, which ensures efficient operation at low currents, making it ideal for portable and low power applications.

Constructed in a small SOT-23-3 package, the MMUN2235LT1G is designed for surface mount technology (SMT), allowing for high-density PCB assembly. Its compact form factor is beneficial for space-constrained applications, while also providing the thermal performance required for reliable operation.

ON Semiconductor's commitment to environmental sustainability is evident in the MMUN2235LT1G's compliance with RoHS standards, ensuring that no hazardous substances are used in its manufacture. This makes it a suitable choice for eco-friendly designs and applications.

Whether you're designing power management circuits, signal amplification stages, or looking for a general-purpose transistor for your next electronic project, the MMUN2235LT1G offers the performance and reliability that engineers have come to expect from ON Semiconductor products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
685+ $0.0734 $50.2790
1,665+ $0.0602 $100.2330
2,575+ $0.0583 $150.1225
3,550+ $0.0564 $200.2200
4,580+ $0.0546 $250.0680
6,135+ $0.0489 $300.0015
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 685 pcs
Order Increment : 1 pcs
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