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MPS751ZL1G

Part No MPS751ZL1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Single
Description TRANS PNP 60V 2A TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging AMMO PACKAGE
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 500mV @ 200mA, 2A
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 75 @ 1A, 2V
Maximum Power Dissipation 625mW
Frequency - Transition 75MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Win Source Part Number 059489-MPS751ZL1G
Ultra Librarian 3D Model Ultra Librarian MPS751ZL1G CAD Model

Description

ON Semiconductor MPS751ZL1G Bipolar Transistor

The MPS751ZL1G is a robust PNP bipolar junction transistor (BJT) from ON Semiconductor, designed to offer high performance in a variety of electronic applications. This high-quality semiconductor device is known for its reliability and efficiency, making it a preferred choice for designers and engineers in the electronics industry.

Constructed with ON Semiconductor's advanced process technology, the MPS751ZL1G features a V<sub>CEO (Collector-Emitter Voltage) of -60V and a V<sub>EBO (Emitter-Base Voltage) of -5V, which ensures safe operation even under stressful conditions. Its collector current capability of -2A makes it suitable for moderate power applications, and it can dissipate power up to 1W, ensuring stable performance under a range of conditions.

The MPS751ZL1G comes in a TO-92 package, which is a widely used through-hole mounting package, making it easy to integrate into various circuit designs. Its compact size and leaded format allow for easy handling and soldering, which is advantageous for both automated assembly lines and manual soldering operations.

With a DC current gain (h<sub>FE) range of 100 to 200, this transistor can amplify weak signals without significant distortion, making it an excellent choice for amplification stages in audio devices, signal processing equipment, and other analog circuits. Additionally, its fast switching times contribute to efficient operation in switching applications, such as power supplies and motor control circuits.

The MPS751ZL1G is also characterized by its low saturation voltage, which minimizes power loss and heat generation when the transistor is in the on-state. This feature is particularly beneficial in battery-powered devices where power efficiency is critical.

ON Semiconductor has designed the MPS751ZL1G with a focus on reliability, providing a product that meets strict industry standards. It is suitable for a wide range of applications, including but not limited to, load switches, power management, and various types of signal amplification. Its robustness and versatility make it an essential component for any electronic project requiring a high-quality PNP transistor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
200+ $0.2945 $58.9000
480+ $0.2414 $115.8720
740+ $0.2345 $173.5300
1,025+ $0.2264 $232.0600
1,320+ $0.2195 $289.7400
1,765+ $0.1964 $346.6460
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,700 pieces
MOQ: 200 pcs
Order Increment : 1 pcs
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